5秒后页面跳转
LMV832MME PDF预览

LMV832MME

更新时间: 2024-01-05 05:53:42
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器
页数 文件大小 规格书
20页 1052K
描述
3.3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers

LMV832MME 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SSOP
包装说明:VSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.2
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00001 µA25C 时的最大偏置电流 (IIB):0.00001 µA
最小共模抑制比:77 dB标称共模抑制比:93 dB
频率补偿:YES最大输入失调电压:1000 µV
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:3 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1功能数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.19
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:+-1.35/+-2.75/2.7/5.5 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.07 mm标称压摆率:2 V/us
子类别:Operational Amplifier最大压摆率:0.6 mA
供电电压上限:6 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:3300 kHz最小电压增益:125000
宽带:NO宽度:3 mm
Base Number Matches:1

LMV832MME 数据手册

 浏览型号LMV832MME的Datasheet PDF文件第2页浏览型号LMV832MME的Datasheet PDF文件第3页浏览型号LMV832MME的Datasheet PDF文件第4页浏览型号LMV832MME的Datasheet PDF文件第5页浏览型号LMV832MME的Datasheet PDF文件第6页浏览型号LMV832MME的Datasheet PDF文件第7页 
October 6, 2008  
LMV831 Single/ LMV832 Dual/ LMV834 Quad  
3.3 MHz Low Power CMOS, EMI Hardened Operational  
Amplifiers  
General Description  
Features  
National’s LMV831, LMV832, and LMV834 are CMOS input,  
low power op amp IC's, providing a low input bias current, a  
wide temperature range of −40°C to 125°C and exceptional  
performance making them robust general purpose parts. Ad-  
ditionally, the LMV831/LMV832/LMV834 are EMI hardened  
to minimize any interference so they are ideal for EMI sensi-  
tive applications.  
Unless otherwise noted, typical values at TA= 25°C,  
V+ = 3.3V  
Supply voltage  
2.7V to 5.5V  
240 µA  
1 mV max  
0.1 pA  
3.3 MHz  
120 dB  
12 nV/Hz  
2 V/µs  
Supply current (per channel)  
Input offset voltage  
Input bias current  
GBW  
The unity gain stable LMV831/LMV832/LMV834 feature  
3.3 MHz of bandwidth while consuming only 0.24 mA of cur-  
rent per channel. These parts also maintain stability for ca-  
pacitive loads as large as 200 pF. The LMV831/LMV832/  
LMV834 provide superior performance and economy in terms  
of power and space usage.  
EMIRR at 1.8 GHz  
Input noise voltage at 1 kHz  
Slew rate  
Output voltage swing  
Output current drive  
Rail-to-Rail  
30 mA  
Operating ambient temperature range −40°C to 125°C  
This family of parts has a maximum input offset voltage of  
1 mV, a rail-to-rail output stage and an input common-mode  
voltage range that includes ground. Over an operating range Applications  
from 2.7V to 5.5V the LMV831/LMV832/LMV834 provide a  
PSRR of 93 dB, and a CMRR of 91 dB. The LMV831 is offered  
in the space saving 5-Pin SC70 package, the LMV832 in the  
8-Pin MSOP and the LMV834 is offered in the 14-Pin TSSOP  
package.  
Photodiode preamp  
Piezoelectric sensors  
Portable/battery-powered electronic equipment  
Filters/buffers  
PDAs/phone accessories  
Typical Application  
EMI Hardened Sensor Application  
30024101  
© 2008 National Semiconductor Corporation  
300241  
www.national.com  

与LMV832MME相关器件

型号 品牌 描述 获取价格 数据表
LMV832MME/NOPB TI Dual, 5.5-V, 3.3-MHz, low noise (12-nV/√Hz) o

获取价格

LMV832MMX TI LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A

获取价格

LMV832MMX NSC 3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers

获取价格

LMV832MMX/NOPB TI Dual, 5.5-V, 3.3-MHz, low noise (12-nV/√Hz) o

获取价格

LMV834 TI LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A

获取价格

LMV834MT TI LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A

获取价格