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LMV831MG/NOPB

更新时间： 2024-01-22 02:42:30
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器放大器电路
页数 文件大小 规格书
27页 1391K
描述
Single, 5.5-V, 3.3-MHz, 64-mA output current, low noise (12-nV/√Hz) operational amplifier | DCK | 5 | -40 to 125

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LMV831MG/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-70
包装说明：TSSOP, TSSOP5/6,.08针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：0.94放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00001 µA
25C 时的最大偏置电流 (IIB)：0.00001 µA最小共模抑制比：77 dB
标称共模抑制比：93 dB频率补偿：YES
最大输入失调电压：1000 µVJESD-30 代码：R-PDSO-G5
JESD-609代码：e3长度：2 mm
低-偏置：YES低-失调：NO
微功率：YES湿度敏感等级：1
功能数量：1端子数量：5
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP5/6,.08封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：+-1.35/+-2.75/2.7/5.5 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.1 mm
标称压摆率：2 V/us子类别：Operational Amplifier
最大压摆率：0.31 mA供电电压上限：6 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：3300 kHz
最小电压增益：125000宽带：NO
宽度：1.25 mmBase Number Matches：1

LMV831MG/NOPB 数据手册

 浏览型号LMV831MG/NOPB的Datasheet PDF文件第1页浏览型号LMV831MG/NOPB的Datasheet PDF文件第3页浏览型号LMV831MG/NOPB的Datasheet PDF文件第4页浏览型号LMV831MG/NOPB的Datasheet PDF文件第5页浏览型号LMV831MG/NOPB的Datasheet PDF文件第6页浏览型号LMV831MG/NOPB的Datasheet PDF文件第7页 
LMV831, LMV832, LMV834  
SNOSAZ6B –AUGUST 2008–REVISED MARCH 2013  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
Absolute Maximum Ratings(1)(2)  
Human Body Model  
Charge-Device Model  
Machine Model  
2 kV  
ESD Tolerance(3)  
1 kV  
200V  
VIN Differential  
Supply Voltage (VS = V+ – V−)  
± Supply Voltage  
6V  
V++0.4V,  
Voltage at Input/Output Pins  
V− −0.4V  
Storage Temperature Range  
Junction Temperature(4)  
Soldering Information  
−65°C to 150°C  
150°C  
Infrared or Convection (20 sec)  
260°C  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics Tables.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) Human Body Model, applicable std. MIL-STD-883, Method 3015.7. Machine Model, applicable std. JESD22-A115-A (ESD MM std. of  
JEDEC) Field-Induced Charge-Device Model, applicable std. JESD22-C101-C (ESD FICDM std. of JEDEC).  
(4) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
Operating Ratings(1)  
Temperature Range(2)  
Supply Voltage (VS = V+ – V−)  
−40°C to 125°C  
2.7V to 5.5V  
302°C/W  
5-Pin SC70  
(2)  
Package Thermal Resistance (θJA  
)
8-Pin VSSOP  
14-Pin TSSOP  
217°C/W  
135°C/W  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is intended to be functional, but specific performance is not ensured. For ensured specifications and the test  
conditions, see the Electrical Characteristics Tables.  
(2) The maximum power dissipation is a function of TJ(MAX), θJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (TJ(MAX) - TA)/ θJA . All numbers apply for packages soldered directly onto a PC board.  
3.3V Electrical Characteristics(1)  
Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL =10 kΩ to V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
TCVOS  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
(2)  
(3)  
(2)  
Input Offset Voltage(4)  
±0.25  
±0.5  
±0.5  
±1.00  
±1.23  
mV  
Input Offset Voltage Temperature  
Drift(4)(5)  
LMV831,  
LMV832  
±1.5  
μV/°C  
LMV834  
±1.7  
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under  
conditions of internal self-heating where TJ > TA.  
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using  
statistical quality control (SQC) method.  
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(4) The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting  
distribution.  
(5) This parameter is specified by design and/or characterization and is not tested in production.  
2
Submit Documentation Feedback  
Copyright © 2008–2013, Texas Instruments Incorporated  
Product Folder Links: LMV831 LMV832 LMV834  
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