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LMV831MG/NOPB

更新时间： 2023-06-19 15:20:15
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器放大器电路
页数 文件大小 规格书
27页 1391K
描述
Single, 5.5-V, 3.3-MHz, 64-mA output current, low noise (12-nV/√Hz) operational amplifier | DCK | 5 | -40 to 125

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中文翻译

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LMV831MG/NOPB 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-70
包装说明：TSSOP, TSSOP5/6,.08针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：0.94放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00001 µA
25C 时的最大偏置电流 (IIB)：0.00001 µA最小共模抑制比：77 dB
标称共模抑制比：93 dB频率补偿：YES
最大输入失调电压：1000 µVJESD-30 代码：R-PDSO-G5
JESD-609代码：e3长度：2 mm
低-偏置：YES低-失调：NO
微功率：YES湿度敏感等级：1
功能数量：1端子数量：5
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP5/6,.08封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：+-1.35/+-2.75/2.7/5.5 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.1 mm
标称压摆率：2 V/us子类别：Operational Amplifier
最大压摆率：0.31 mA供电电压上限：6 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：3300 kHz
最小电压增益：125000宽带：NO
宽度：1.25 mmBase Number Matches：1

LMV831MG/NOPB 数据手册

 浏览型号LMV831MG/NOPB的Datasheet PDF文件第1页浏览型号LMV831MG/NOPB的Datasheet PDF文件第2页浏览型号LMV831MG/NOPB的Datasheet PDF文件第3页浏览型号LMV831MG/NOPB的Datasheet PDF文件第5页浏览型号LMV831MG/NOPB的Datasheet PDF文件第6页浏览型号LMV831MG/NOPB的Datasheet PDF文件第7页 
LMV831, LMV832, LMV834  
SNOSAZ6B –AUGUST 2008–REVISED MARCH 2013  
www.ti.com  
3.3V Electrical Characteristics(1) (continued)  
Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 3.3V, V− = 0V, VCM = V+/2, and RL =10 kΩ to V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
(2)  
(3)  
(2)  
GBW  
Gain Bandwidth Product  
Phase Margin  
3.3  
65  
MHz  
deg  
Φm  
en  
Input Referred Voltage Noise Density f = 1 kHz  
f = 10 kHz  
12  
nV/√Hz  
10  
in  
Input Referred Current Noise Density  
Closed Loop Output Impedance  
Common-mode Input Capacitance  
Differential-mode Input Capacitance  
Total Harmonic Distortion + Noise  
f = 1 kHz  
f = 2 MHz  
0.005  
500  
15  
pA/√Hz  
ROUT  
CIN  
Ω
pF  
%
20  
THD+N  
f = 1 kHz, AV = 1, BW ≥ 500 kHz  
0.02  
5V Electrical Characteristics(1)  
Unless otherwise specified, all limits are specified for at TA = 25°C, V+ = 5V, V− = 0V, VCM = V+/2, and RL = 10 kΩ to V+/2.  
Boldface limits apply at the temperature extremes.  
Symbol  
VOS  
TCVOS  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
(2)  
(3)  
(2)  
Input Offset Voltage(4)  
±0.25  
±0.5  
±1.00  
±1.23  
mV  
Input Offset Voltage Temperature  
Drift(4)(5)  
LMV831,  
LMV832  
±1.5  
±1.7  
μV/°C  
LMV834  
±0.5  
0.1  
IB  
Input Bias Current(5)  
10  
500  
pA  
pA  
dB  
IOS  
Input Offset Current  
Common-Mode Rejection Ratio(4)  
1
CMRR  
0V ≤ VCM ≤ V+ −1.2V  
77  
77  
93  
PSRR  
Power Supply Rejection Ratio(4)  
EMI Rejection Ratio, IN+ and IN-(6)  
2.7V ≤ V+ ≤ 5.5V,  
VOUT = 1V  
76  
75  
93  
80  
dB  
EMIRR  
VRF_PEAK=100 mVP (−20 dBP),  
f = 400 MHz  
VRF_PEAK=100 mVP (−20 dBP),  
90  
f = 900 MHz  
dB  
V
VRF_PEAK=100 mVP (−20 dBP),  
f = 1800 MHz  
110  
120  
VRF_PEAK=100 mVP (−20 dBP),  
f = 2400 MHz  
CMVR  
Input Common-Mode Voltage Range  
CMRR ≥ 65 dB  
–0.1  
3.8  
(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very  
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under  
conditions of internal self-heating where TJ > TA.  
(2) Limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlations using  
statistical quality control (SQC) method.  
(3) Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary  
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped  
production material.  
(4) The typical value is calculated by applying absolute value transform to the distribution, then taking the statistical average of the resulting  
distribution.  
(5) This parameter is specified by design and/or characterization and is not tested in production.  
(6) The EMI Rejection Ratio is defined as EMIRR = 20log ( VRF_PEAK/ΔVOS).  
4
Submit Documentation Feedback  
Copyright © 2008–2013, Texas Instruments Incorporated  
Product Folder Links: LMV831 LMV832 LMV834  
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中文翻译

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LMV831MG/NOPB 替代型号

型号 品牌 替代类型 描述 数据表
LMV831MGE/NOPB TI

类似代替

 Single, 5.5-V, 3.3-MHz, 64-mA output current,
LMV831MGX/NOPB TI

类似代替

 Single, 5.5-V, 3.3-MHz, 64-mA output current,
LMV321SQ3T2G ONSEMI

功能相似

 Single, Dual, Quad Low-Voltage, Rail-to-Rail Operational Amplifiers

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