生命周期: | Obsolete | 零件包装代码: | MSOP |
包装说明: | MSOP-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.54 |
放大器类型: | OPERATIONAL AMPLIFIER | 最大平均偏置电流 (IIB): | 0.0005 µA |
标称共模抑制比: | 91 dB | 最大输入失调电压: | 1230 µV |
JESD-30 代码: | S-PDSO-G8 | 长度: | 3 mm |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
座面最大高度: | 1.09 mm | 标称压摆率: | 2 V/us |
子类别: | Operational Amplifier | 供电电压上限: | 6 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | DUAL | 标称均一增益带宽: | 3300 kHz |
宽度: | 3 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
LMV832MM/NOPB | TI |
获取价格 |
Dual, 5.5-V, 3.3-MHz, low noise (12-nV/√Hz) o | |
LMV832MME | NSC |
获取价格 |
3.3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers | |
LMV832MME | TI |
获取价格 |
LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A | |
LMV832MME/NOPB | TI |
获取价格 |
Dual, 5.5-V, 3.3-MHz, low noise (12-nV/√Hz) o | |
LMV832MMX | TI |
获取价格 |
LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A | |
LMV832MMX | NSC |
获取价格 |
3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers | |
LMV832MMX/NOPB | TI |
获取价格 |
Dual, 5.5-V, 3.3-MHz, low noise (12-nV/√Hz) o | |
LMV834 | TI |
获取价格 |
LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A | |
LMV834MT | TI |
获取价格 |
LMV831 Single/ LMV832 Dual/ LMV834 Quad 3.3 MHz Low Power CMOS, EMI Hardened Operational A | |
LMV834MT | NSC |
获取价格 |
3 MHz Low Power CMOS, EMI Hardened Operational Amplifiers |