LMV225SD

更新时间： 2024-02-13 20:42:03

品牌	Logo	应用领域
德州仪器 - TI		射频
页数	文件大小	规格书
30页	947K
描述
LMV225/LMV226/LMV228 RF Power Detector for CDMA and WCDMA

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技术参数
数据手册

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LMV225SD 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	VFBGA,
Reach Compliance Code：	compliant	HTS代码：	8542.39.00.01
Factory Lead Time：	1 week	风险等级：	5.25
JESD-30 代码：	S-XBGA-B4	JESD-609代码：	e1
湿度敏感等级：	1	功能数量：	1
封装主体材料：	UNSPECIFIED	封装代码：	VFBGA
封装形状：	SQUARE	封装形式：	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度（摄氏度）：	260	最大压摆率：	8 mA
表面贴装：	YES	电信集成电路类型：	RF AND BASEBAND CIRCUIT
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

LMV225SD 数据手册

LMV225, LMV226, LMV228

SNWS013L –AUGUST 2003–REVISED MARCH 2013

www.ti.com

5.0 DC AND AC ELECTRICAL CHARACTERISTICS

Unless otherwise specified, all limits are specified to V_DD= 5.0V; T_J= 25°C. Boldface limits apply at temperature extremes.

(1)

Symbol

I_DD

Parameter

Supply Current

Condition

Min

Typ

Max

Units

Active Mode: RF_IN/E_N= V_DDLMV225

(DC), no RF Input Power

5.3

7.5

Present.

LMV226

5.3

5.4

6.8

LMV228

6.8

Shutdown: RF_IN/E_N= GND (DC), no RF Input

Power Present.

0.32

4.5

0.8

μA

V_LOW

V_HIGH

t_on

E_NLogic Low Input Level

(2)

E_NLogic High Input Level

1.8

(2)

(3)

Turn-on-Time

No RF Input Power Present, LMV225

2.1

1.0

1.7

4.5

Output Loaded with 10 pF

LMV226

μs

LMV228

(4)

t_r

Rise Time

Step from no Power to

0 dBm Applied, Output

Loaded with 10 pF

LMV225

Step from no Power to

15 dBm Applied, Output

Loaded with 10 pF

LMV226

LMV228

1.4

4.8

I_EN

P_IN

Current Into RF_IN/E_NPin

μA

(5)

Input Power Range

LMV225

LMV226

LMV228

−30

dBm

−43

−13

dBV

dBm

dBV

dBm

dBV

−15

−28

−15

−28

(1) Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very

limited self-heating of the device such that T_J= T_A. No specification of parametric performance is indicated in the electrical tables under

conditions of internal self-heating where T_J> T_A.

(2) All limits are specified by design or statistical analysis

(3) Turn-on time is measured by connecting a 10 kΩ resistor to the RF_IN/E_Npin. Be aware that in the actual application on the front page,

the RC-time constant of resistor R₂and capacitor C adds an additional delay.

(4) Typical values represent the most likely parametric norm.

(5) Power in dBV = dBm + 13 when the impedance is 50Ω.

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