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LMV227SD PDF预览

LMV227SD

更新时间: 2024-11-20 04:19:59
品牌 Logo 应用领域
美国国家半导体 - NSC 测试射频
页数 文件大小 规格书
12页 740K
描述
Production RF Tested, RF Power Detector for CDMA and WCDMA

LMV227SD 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:LLP-6Reach Compliance Code:not_compliant
HTS代码:8542.39.00.01风险等级:5.54
JESD-30 代码:R-XDSO-N6JESD-609代码:e0
长度:2.5 mm湿度敏感等级:1
功能数量:1端子数量:6
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.8 mm标称供电电压:2.7 V
表面贴装:YES电信集成电路类型:RF AND BASEBAND CIRCUIT
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn85Pb15)
端子形式:NO LEAD端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:2.2 mm

LMV227SD 数据手册

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July 2006  
LMV227  
Production RF Tested, RF Power Detector for CDMA and  
WCDMA  
General Description  
Features  
n 30 dB linear in dB power detection range  
n Output voltage range 0.2 to 2V  
n Logic low shutdown  
The LMV227 is a 30 dB RF power detector intended for use  
in CDMA and WCDMA applications. The device has an RF  
frequency range from 450 MHz to 2 GHz. It provides an  
accurate temperature and supply compensated output volt-  
age that relates linearly to the RF input power in dBm. The  
circuit operates with a single supply from 2.7V to 5V. The  
LMV227 has an integrated filter for low-ripple average power  
detection of CDMA signals with 30 dB dynamic range. Addi-  
tional filtering can be applied using a single external capaci-  
tor.  
n Multi-band operation from 450 MHz to 2000 MHz  
n Accurate temperature compensation  
Applications  
n CDMA RF power control  
n WCDMA RF power control  
n CDMA2000 RF power control  
n PA modules  
The LMV227 has an RF power detection range from -30  
dBm to 0 dBm and is ideally suited for direct use in combi-  
nation with resistive taps. The device is active for Enable =  
HI, otherwise it goes into a low power consumption shut-  
down mode. During shutdown the output will be LOW. The  
output voltage ranges from 0.2V to 2V and can be scaled  
down to meet ADC input range requirements. The output  
signal bandwidth can optionally be lowered externally as  
well.  
Typical Application  
20118101  
© 2006 National Semiconductor Corporation  
DS201181  
www.national.com  

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