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LLSD101B PDF预览

LLSD101B

更新时间: 2024-09-14 22:31:11
品牌 Logo 应用领域
美微科 - MCC 整流二极管开关
页数 文件大小 规格书
2页 361K
描述
Schottky Barrier Switching Diode

LLSD101B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MELF包装说明:GLASS, MINIMELF-2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.65Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0最大非重复峰值正向电流:2 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:0.015 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):240
最大功率耗散:0.4 W认证状态:Not Qualified
最大重复峰值反向电压:50 V最大反向恢复时间:0.001 µs
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:30Base Number Matches:1

LLSD101B 数据手册

 浏览型号LLSD101B的Datasheet PDF文件第2页 
LLSD101A  
THRU  
LLSD101C  
M C C  
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Features  
l
l
l
l
Low Reverse Recovery Time  
Low Reverse Capacitance  
Low Forward Voltage Drop  
Schottky Barrier  
Switching Diode  
Guard Ring Construction for Transient Protection  
Mechanical Data  
l Case: MiniMELF, Glass  
MINIMELF  
l Terminals: Solderable per MIL -STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
l Weight: 0.05 grams ( approx.)  
Cathode Mark  
Maximum Ratings @ 25oC Unless Otherwise Specified  
C
Characteristic  
Symbol LLSD101A LLSD101B LLSD101C  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
60V  
42V  
50V  
40V  
28V  
B
RMS Reverse Voltage  
VR(RMS)  
IFM  
35V  
A
Forward Continuous Current(Note 1)  
15mA  
Non-Repetitive Peak @ t<=1.0s  
Forward Surge Current @ t=10us  
50mA  
2.0A  
IFSM  
DIMENSION  
Power Dissipation(Note 1)  
Thermal Resistance(Note 1)  
Pd  
R
400mW  
375K/W  
-55 to 150oC  
DIM  
INCHES  
MIN  
MM  
NOTE  
MAX  
.142  
.016  
.059  
MIN  
3.40  
.20  
MAX  
3.60  
.40  
A
B
C
.134  
.008  
.055  
Operation & Storage Temp. Range Tj, TSTG  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
1.40  
1.50  
Charateristic  
Symbol Min  
Max Unit  
Test Cond.  
VR =50V  
SUGGESTED SOLDER  
PAD LAYOUT  
Peak  
LLSD101A  
Reverse LLSD101B  
IRM  
200  
nA VR =40V  
VR =30V  
-----  
0.105  
Current  
LLSD101C  
LLSD101A  
LLSD101B  
LLSD101C  
0.41  
0.40  
0.39  
1.00  
0.95  
0.90  
2.0  
IF=1.0mA  
IF=1.0mA  
Forward  
VFM  
V
IF=1.0mA  
IF=15mA  
IF=15mA  
IF=15mA  
-----  
0.075”  
Volt. Drop LLSD101A  
LLSD101B  
LLSD101C  
Junction  
LLSD101A  
Capacitance LLSD101B  
LLSD101C  
0.030”  
Cj  
2.1  
pF VR =0V, f=1.0MHz  
IF=IR =5mA,  
-----  
2.2  
trr  
Reverse Recovery Time  
1.0  
ns  
-----  
recover to 0.1 I R  
Note: 1. Valid provided that electrodes are kept at ambient temperature  
www.mccsemi.com  

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