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LLSD103B PDF预览

LLSD103B

更新时间: 2024-11-05 22:31:11
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
2页 142K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

LLSD103B 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
Reach Compliance Code:compliant风险等级:5.75
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.6 V湿度敏感等级:1
最大非重复峰值正向电流:15 A元件数量:1
最高工作温度:150 °C最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKYBase Number Matches:1

LLSD103B 数据手册

 浏览型号LLSD103B的Datasheet PDF文件第2页 
LLSD103A - 103C  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
Low Forward Voltage Drop  
C
·
Guard Ring Construction for Transient  
Protection  
B
·
·
Fast Reverse Recovery Time  
Low Reverse Capacitance  
A
Mechanical Data  
MiniMELF  
·
Case: MiniMELF, Glass  
·
Terminals: Solderable per MIL-STD-202,  
Dim  
A
Min  
3.30  
1.30  
0.28  
Max  
3.70  
1.60  
0.50  
Method 208  
·
·
·
Marking: Cathode Band Only  
Polarity: Cathode Band  
Weight: 0.05 grams (approx.)  
B
C
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
LLSD103A  
LLSD103B  
LLSD103C  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
V
40  
28  
30  
20  
14  
VR(RMS)  
IFM  
V
mA  
A
RMS Reverse Voltage  
21  
350  
1.0  
Forward Continuous Current (Note 1)  
Repetitive Peak Forward Current  
IFRM  
@ t £ 1.0s  
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s  
1.5  
7.5  
IFSM  
Pd  
A
@ t = 10ms  
Power Dissipation (Note 1)  
400  
mW  
°C/W  
°C  
R
qJA  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Operating Temperature Range  
250  
Tj  
-55 to +125  
-55 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Forward Voltage Drop (Note 2)  
Peak Reverse Current (Note 2)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
IF = 20mA  
IF = 200mA  
0.37  
0.60  
VF  
¾
¾
V
LLSD103A  
LLSD103B  
LLSD103C  
VR = 30V  
VR = 20V  
VR = 10V  
IR  
¾
¾
5.0  
mA  
VR = 0V, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
50  
¾
pF  
ns  
IF = IR = 50mA to 200mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
¾
10  
Note:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30068 Rev. 2 - 2  
1 of 2  
LLSD103A - 103C  

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