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LLSD103B PDF预览

LLSD103B

更新时间: 2024-11-05 22:31:11
品牌 Logo 应用领域
美微科 - MCC 二极管开关
页数 文件大小 规格书
2页 363K
描述
Schottky Barrier Switching Diode

LLSD103B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:MELF包装说明:O-LELF-R2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.25外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.37 V
JESD-30 代码:O-LELF-R2JESD-609代码:e0
最大非重复峰值正向电流:15 A元件数量:1
端子数量:2最高工作温度:150 °C
最大输出电流:0.35 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):240最大功率耗散:0.4 W
认证状态:Not Qualified最大重复峰值反向电压:30 V
最大反向恢复时间:0.01 µs子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:30
Base Number Matches:1

LLSD103B 数据手册

 浏览型号LLSD103B的Datasheet PDF文件第2页 
LLSD103A  
THRU  
LLSD103C  
M C C  
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Features  
l
l
l
Low Reverse Recovery Time  
Low Reverse Capacitance  
Low Forward Voltage Drop  
Schottky Barrier  
Switching Diode  
l Guard Ring Construction for Transient Protection  
Mechanical Data  
l Case: MiniMELF, Glass  
MINIMELF  
l Terminals: Solderable per MIL-STD-202, Method 208  
l Polarity: Indicated by Cathode Band  
l Weight: 0.05 grams ( approx.)  
Cathode Mark  
Maximum Ratings @ 25oC Unless Otherwise Specified  
Characteristic  
Symbol LLSD103A LLSD103B LLSD103C  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
C
40V  
28V  
30V  
20V  
14V  
B
VR(RMS)  
IFM  
RMS Reverse Voltage  
21V  
A
Forward Continuous Current(Note1)  
350mA  
Maximum Single cycle surge 60Hz  
sine wave  
IFSM  
15A  
DIMENSION  
Power Dissipation(Note 1)  
Thermal Resistance(Note 1)  
Operation/Storage Temp. Range  
Pd  
R
400mW  
250K/W  
-55 to 150 oC  
DIM  
INCHES  
MIN  
MM  
NOTE  
MAX  
.142  
.016  
.059  
MIN  
3.40  
0.20  
1.40  
MAX  
3.60  
0.40  
1.50  
A
B
C
.134  
.008  
.055  
Tj, TSTG  
Electrical Characteristics @ 25oC Unless Otherwise Specified  
SUGGESTED SOLDER  
PAD LAYOUT  
Charateristic  
Peak LLSD103A  
Reverse LLSD103B  
Current LLSD103C  
Symbol Min Typ Max  
Test Cond.  
VR=30V  
0.105  
5.0uA  
IRM  
----- -----  
VR=20V  
VR=10V  
0.075”  
Maximum Forward  
Voltage Drop  
VFM  
----- ----- 0.37V IF=20mA  
0.60V IF=200mA  
Junction Capacitance  
Cj  
trr  
----- 50  
----- 10  
pF  
ns  
VR=0V, f=1.0MHz  
0.030”  
IF=IR=50mA to 200mA,  
recover to 0.1 IR  
Reverse Recovery Time  
Note: 1. Valid provided that electrodes are kept at ambient temperature  
www.mccsemi.com  

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