LLSD103

更新时间： 2024-09-15 22:31:11

品牌	Logo	应用领域
美台 - DIODES		肖特基二极管
页数	文件大小	规格书
2页	142K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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LLSD103 数据手册

LLSD103A - 103C

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

Low Forward Voltage Drop

Guard Ring Construction for Transient

Protection

Fast Reverse Recovery Time

Low Reverse Capacitance

Mechanical Data

MiniMELF

Case: MiniMELF, Glass

Terminals: Solderable per MIL-STD-202,

Dim

Min

3.30

1.30

0.28

Max

3.70

1.60

0.50

Method 208

Marking: Cathode Band Only

Polarity: Cathode Band

Weight: 0.05 grams (approx.)

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Characteristic

Symbol

LLSD103A

LLSD103B

LLSD103C

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V_RRM

V_RWM

V_R

V_R(RMS)

I_FM

RMS Reverse Voltage

350

1.0

Forward Continuous Current (Note 1)

Repetitive Peak Forward Current

I_FRM

@ t £ 1.0s

Non-Repetitive Peak Forward Surge Current @ t £ 1.0s

1.5

7.5

I_FSM

P_d

@ t = 10ms

Power Dissipation (Note 1)

400

°C/W

°C

qJA

Thermal Resistance, Junction to Ambient Air (Note 1)

Operating Temperature Range

250

T_j

-55 to +125

-55 to +150

T_STG

Storage Temperature Range

°C

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Forward Voltage Drop (Note 2)

Peak Reverse Current (Note 2)

Symbol

Min

Typ

Max

Unit

Test Condition

I_F= 20mA

I_F= 200mA

0.37

0.60

V_F

LLSD103A

LLSD103B

LLSD103C

V_R= 30V

V_R= 20V

V_R= 10V

I_R

5.0

V_R= 0V, f = 1.0MHz

C_T

t_rr

Total Capacitance

I_F= I_R= 50mA to 200mA,

I_rr= 0.1 x I_R, R_L= 100W

Reverse Recovery Time

Note:

1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website

at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

DS30068 Rev. 2 - 2

1 of 2

LLSD103A - 103C

中文翻译

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