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LH28F160S5HR-L10 PDF预览

LH28F160S5HR-L10

更新时间： 2024-09-16 23:46:19
品牌 Logo 应用领域
其他 - ETC 闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
56页 368K
描述
x8/x16 Flash EEPROM

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LH28F160S5HR-L10 数据手册

 浏览型号LH28F160S5HR-L10的Datasheet PDF文件第2页浏览型号LH28F160S5HR-L10的Datasheet PDF文件第3页浏览型号LH28F160S5HR-L10的Datasheet PDF文件第4页浏览型号LH28F160S5HR-L10的Datasheet PDF文件第5页浏览型号LH28F160S5HR-L10的Datasheet PDF文件第6页浏览型号LH28F160S5HR-L10的Datasheet PDF文件第7页 
LH28F160S5-L/S5H-L  
16 M-bit (2 MB x 8/1 MB x 16) Smart 5  
Flash Memories (Fast Programming)  
LH28F160S5-L/S5H-L  
DESCRIPTION  
• High performance read access time  
LH28F160S5-L70  
The LH28F160S5-L/S5H-L flash memories with  
Smart 5 technology are high-density, low-cost,  
nonvolatile, read/write storage solution for a wide  
range of applications, having high programming  
performance is achieved through highly-optimized  
page buffer operations. Their symmetrically-blocked  
architecture, flexible voltage and enhanced cycling  
capability provide for highly flexible component  
suitable for resident flash arrays, SIMMs and  
memory cards. Their enhanced suspend  
capabilities provide for an ideal solution for code +  
data storage applications. For secure code storage  
applications, such as networking, where code is  
either directly executed out of flash or downloaded  
to DRAM, the LH28F160S5-L/S5H-L offer three  
levels of protection : absolute protection with VPP at  
GND, selective hardware block locking, or flexible  
software block locking. These alternatives give  
designers ultimate control of their code security  
needs. The LH28F160S5-L/S5H-L are conformed  
to the flash Scalable Command Set (SCS) and the  
Common Flash Interface (CFI) specification which  
enable universal and upgradable interface, enable  
the highest system/device data transfer rates and  
minimize device and system-level implementation  
costs.  
– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)  
LH28F160S5H-L70  
– 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)  
LH28F160S5-L10/S5H-L10  
– 100 ns (5.0±0.5 V)  
• Enhanced automated suspend options  
– Write suspend to read  
– Block erase suspend to write  
– Block erase suspend to read  
• Enhanced data protection features  
– Absolute protection with VPP = GND  
– Flexible block locking  
– Erase/write lockout during power transitions  
• SRAM-compatible write interface  
• User-configurable x8 or x16 operation  
• High-density symmetrically-blocked architecture  
– Thirty-two 64 k-byte erasable blocks  
• Enhanced cycling capability  
– 100 000 block erase cycles  
– 3.2 million block erase cycles/chip  
• Low power management  
– Deep power-down mode  
– Automatic power saving mode decreases ICC  
in static mode  
• Automated write and erase  
– Command user interface  
FEATURES  
– Status register  
• Smart 5 technology  
• ETOXTM V nonvolatile flash technology  
– 5 V VCC  
• Packages  
– 5 V VPP  
– 56-pin TSOP Type I (TSOP056-P-1420)  
Normal bend/Reverse bend  
• High speed write performance  
– Two 32-byte page buffers  
– 2 µs/byte write transfer rate  
• Common Flash Interface (CFI)  
– Universal & upgradable interface  
• Scalable Command Set (SCS)  
– 56-pin SSOP (SSOP056-P-0600)★  
[LH28F160S5-L]  
– 64-ball CSP (FBGA064-P-0811)  
– 64-pin SDIP (SDIP064-P-0750)★  
ETOX is a trademark of Intel Corporation.  
★ Under development  
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,  
etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.  
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 		16-MBIT(2MBx8/MBx16)Smart 5 Flash MEMORY
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