Datasheet > LH28F160S5R-L70

LH28F160S5R-L70

更新时间： 2024-11-06 23:46:19

品牌	Logo	应用领域
其他 - ETC		闪存可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
56页	368K
描述
x8/x16 Flash EEPROM

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LH28F160S5R-L70 数据手册

LH28F160S5-L/S5H-L

16 M-bit (2 MB x 8/1 MB x 16) Smart 5

Flash Memories (Fast Programming)

LH28F160S5-L/S5H-L

DESCRIPTION

• High performance read access time

LH28F160S5-L70

The LH28F160S5-L/S5H-L flash memories with

Smart 5 technology are high-density, low-cost,

nonvolatile, read/write storage solution for a wide

range of applications, having high programming

performance is achieved through highly-optimized

page buffer operations. Their symmetrically-blocked

architecture, flexible voltage and enhanced cycling

capability provide for highly flexible component

suitable for resident flash arrays, SIMMs and

memory cards. Their enhanced suspend

capabilities provide for an ideal solution for code +

data storage applications. For secure code storage

applications, such as networking, where code is

either directly executed out of flash or downloaded

to DRAM, the LH28F160S5-L/S5H-L offer three

levels of protection : absolute protection with VPP at

GND, selective hardware block locking, or flexible

software block locking. These alternatives give

designers ultimate control of their code security

needs. The LH28F160S5-L/S5H-L are conformed

to the flash Scalable Command Set (SCS) and the

Common Flash Interface (CFI) specification which

enable universal and upgradable interface, enable

the highest system/device data transfer rates and

minimize device and system-level implementation

costs.

– 70 ns (5.0±0.25 V)/80 ns (5.0±0.5 V)

LH28F160S5H-L70

– 70 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)

LH28F160S5-L10/S5H-L10

– 100 ns (5.0±0.5 V)

• Enhanced automated suspend options

– Write suspend to read

– Block erase suspend to write

– Block erase suspend to read

• Enhanced data protection features

– Absolute protection with VPP = GND

– Flexible block locking

– Erase/write lockout during power transitions

• SRAM-compatible write interface

• User-configurable x8 or x16 operation

• High-density symmetrically-blocked architecture

– Thirty-two 64 k-byte erasable blocks

• Enhanced cycling capability

– 100 000 block erase cycles

– 3.2 million block erase cycles/chip

• Low power management

– Deep power-down mode

– Automatic power saving mode decreases ICC

in static mode

• Automated write and erase

– Command user interface

FEATURES

– Status register

• Smart 5 technology

• ETOX^TMV nonvolatile flash technology

– 5 V VCC

• Packages

– 5 V VPP

– 56-pin TSOP Type I (TSOP056-P-1420)

Normal bend/Reverse bend

• High speed write performance

– Two 32-byte page buffers

– 2 µs/byte write transfer rate

• Common Flash Interface (CFI)

– Universal & upgradable interface

• Scalable Command Set (SCS)

– 56-pin SSOP (SSOP056-P-0600)^★

[LH28F160S5-L]

– 64-ball CSP (FBGA064-P-0811)

– 64-pin SDIP (SDIP064-P-0750)^★

ETOX is a trademark of Intel Corporation.

★ Under development

In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books,

etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.

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与LH28F160S5R-L70相关器件

型号	品牌	获取价格	描述	数据表
LH28F160S5T-L10	ETC	获取价格	x8/x16 Flash EEPROM
LH28F160S5T-L70	SHARP	获取价格	Flash Memory 16M (2MB 】 8/1MB 】 16)
LH28F160S5T-L70A	SHARP	获取价格	Flash Memory 16M (2MB 】 8/1MB 】 16)
LH28F160S5T-L80A	SHARP	获取价格	Flash, 1MX16, 80ns, PDSO56,
LH28F160SGED-L10	SHARP	获取价格	16 M-bit (512 kB x 16 x 2-Bank) SmartVoltage Dual Work Flash Memory
LH28F160SPN	SHARP	获取价格	Flash, 2MX8, 100ns, PDSO44, SOP-44
LH28F160SPN-50	SHARP	获取价格	Flash, 2MX8, 100ns, PDSO44, SOP-44
LH28F256BFHTD-PTTLZ3A	SHARP	获取价格	Flash, 16MX16, 75ns, PDSO56, 14 X 20 MM, PLASTIC, TSOP-56
LH28F320BFB-PBTL60	SHARP	获取价格	32M (x16) Flash Memory
LH28F320BFB-PBTL70	SHARP	获取价格	Flash, 2MX16, 70ns, PBGA48,

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