Datasheet > LGE2305

LGE2305

更新时间： 2024-01-02 12:22:40

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鲁光 - LGE		/
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LGE2305 技术参数

极性：	P Channel	Pd(W)：	1.37
V(BR)DS_min(V)：	-12	ID_max(A)：	-4.2
Rds_max(Ω）：	0.053	@VGS(V)：	-10
VTH(GS)：	-0.5	PACKAGE：	SOT-23
class：	Transistors

LGE2305 数据手册

LGE2305

P-Channel 20-V(D-S) Mosfe

DESCRIPTION

The 2305 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

Schematic diagram

GENERAL FEATURES

●

V_DS= -20V,I_D= -4.1A

R_DS(ON)<75mΩ @ V_GS=-2.5V

R_DS(ON)< 52mΩ @ V_GS=-4.5V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assignment

Application

●PWM applications

●Load switch

●Power management

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2305

SOT-23

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

-20

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current -Continuous

V^DS

V^GS

I_D

±8

-4.1

-15

Drain Current -Pulsed (Note 1)

I_DM

Maximum Power Dissipation

1.7

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

-20

-21

V_DS=-20V,V_GS=0V

-1

μA

http://www.lgesemi.com

m ail:lge@lgesemi.com

Revision:20170301-P1

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