LGE3D30090H
Silicon Carbide Schottky Diode
=
=
900
V
VRRM
IF ( TC≤140℃)
QC
General Description
30
A
This product family offers state of the art performance. It
is designed for high frequency applications here high efficiency
and high reliability are required.
= 101 nC
Features
Zero Forward/Reverse Recovery Current
High Blocking Voltage
High Frequency Operation
Positive Temperature Coefficient on VF
Temperature Independent Switching Behavior
High surge current capability
Benefits
Higher System Efficiency
Parallel Device Convenience without
thermal runaway
Higher Temperature Application
No Switching loss
Hard Switching & Higher Reliability
Environmental Protection
Applications
Motor Drives
Solar/Wind Inverters
AC/DC converters
DC/DC converters
Uninterruptable power supplies
Key performance parameters
IF
Type
VR
QC
TC=140℃
LGE3D30090H
900V
30A
101nC
Caution: This device is sensitive to electrostatic discharge .Users should follow ESD handing procedures.
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Revision:20170701-P1
mail:lge@lgesemi.com