Datasheet > LGE3D30120H

LGE3D30120H

更新时间： 2023-12-06 20:11:25

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鲁光 - LGE		/
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描述
碳化硅肖特基

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数据手册

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LGE3D30120H 数据手册

LGE3D30120H

Silicon Carbide Schottky Diode

V_R= 1200 V

I_F= 30A (T_C=140^oC)

Qc = 155nC (V_R=800V)

Features



Zero Forward/Reverse Recovery Current

High Blocking Voltage

High Frequency Operation

Positive Temperature Coefficient on V_F

Temperature Independent Switching Behavior

High surge current capability

Benefits



Higher System Efficiency

Parallel Device Convenience without

thermal runaway



Higher Temperature Application

No Switching loss

Hard Switching & Higher Reliability

TO-247-2

Environmental Protection

Applications



Motor Drives



AC/DC converters

DC/DC converters

Solar / Wind Inverters

Uninterruptable power supplies

Maximum Ratings (T_C=25°C unless otherwise specified)

Parameter

Peak Repetitive Reverse Voltage

Continuous Forward Current

Symbol

V_RRM

I_F

Test conditions

Value

1200

Unit

T_C=25°C

T_C=135°C

T_C=140°C

T_C= 25°C, t_p=10 ms,

Half Sine Pulse

T_C= 110°C, t_p=10 ms,

Half Sine Pulse

T_C= 25°C, t_p=10 ms,

Freq = 0.1Hz, 100 cycles,

Half Sine Pulse

Non repetitive Forward Surge Current

Repetitive peak Forward Surge Current

I_FSM

230

220

200

I_FRM

T_C= 110°C, t_p=10 ms,

Freq = 0.1Hz, 100 cycles,

Half Sine Pulse

190

P_D

T_C=25°C

T_C=110°C

Total power dissipation

330

140

225

L=2mH, I_AS=15A

V_R= 0-1200V

E_AS

Single Pulse Avalanche Energy

Diode dv/dt ruggedness

Operating Junction Temperature

Storage Temperature

V/ns

dv/dt

T_J

T_STG

-55 to 175 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device

functionality should not be assumed, damage may occur and reliability may be affected.

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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