Datasheet > LGE3D40065H

LGE3D40065H

更新时间： 2023-12-06 20:03:49

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
5页	1545K
描述
碳化硅肖特基

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LGE3D40065H 数据手册

LGE3D40065H

Silicon Carbide Schottky Diode

General Description

650

V_RRM

I_F( T_C≤130℃)

Q_C

This product family offers state of the art

performance. It is designed for high frequency applications

here high efficiency and high reliability are required.

83 nC

Features



Zero Forward/Reverse Recovery Current

High Blocking Voltage

High Frequency Operation

Positive Temperature Coefficient on V_F

Temperature Independent Switching Behavior

Benefits



Higher System Efficiency

Parallel Device Convenience without

thermal runaway



Higher Temperature Application

No Switching loss

Hard Switching & Higher Reliability

Environmental Protection

Applications



Motor Drives

Solar/Wind Inverters

AC/DC converters

DC/DC converters

Uninterruptable power supplies

Key performance parameters

I_F

Type

V_R

Q_C

T_C=130℃

LGE3D40065H

650V

40A

83nC

Caution: This device is sensitive to electrostatic discharge .Users should follow ESD handing procedures.

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

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