Datasheet > LGE3D30065D

LGE3D30065D

更新时间： 2023-12-06 20:10:37

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碳化硅肖特基

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数据手册

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LGE3D30065D 数据手册

LGE3D30065D

Silicon Carbide SchottkyDiode

V_R= 650 V

I_F= 30A (T_C=150^oC)

Qc = 68nC (V_R=400V)

Features

•

Zero Forward/Reverse Recovery Current

High Blocking Voltage

High Frequency Operation

Positive Temperature Coefficient on V_F

Temperature Independent Switching Behavior

TO-247-3

Benefits

•

Higher System Efficiency

Parallel Device Convenience without

thermal runaway

•

Higher Temperature Application

No Switching loss

Hard Switching & Higher Reliability

Environmental Protection

Applications

•

Servo Drives

•

AC/DC converters

DC/DC converters

Uninterruptable power supplies

Solar Inverters

Maximum Ratings

(T_C=25°C unless otherwise specified)

Parameter

Symbol

V_RRM

V_RSM

V_R

Test conditions

Value

650

Unit

Peak Repetitive Reverse Voltage

Peak Reverse Surge Voltage

DC Blocking Voltage

650

T_C=25°C

T_C=135°C

T_C=150°C

Continuous Forward Current

(per leg / per device)

I_F

40/80

20/40

15/30

T_C= 25°C, t_p=10 ms,

Half Sine Pulse

T_C= 110°C, t_p=10 ms,

Half Sine Pulse

T_C= 25°C, t_p=10 us,

Pulse

T_C= 25°C, t_p=10 ms,

Freq = 0.1Hz, 100 cycles,

Half Sine Pulse

Non repetitive Forward Surge Current *

I_FSM

500

Repetitive peak Forward Surge Current *

I_FRM

T_C= 110°C, t_p=10 ms,

Freq = 0.1Hz, 100 cycles,

Half Sine Pulse

T_C=25°C

Total power dissipation (per leg / per device)

Operating Junction Temperature

Storage Temperature

P_D

T_J

T_STG

188/376

-55 to 175 °C

Note : * Per leg ** Per device

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Revision:20230214-P1

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