LGE3D50120H
Silicon Carbide SchottkyDiode
Features
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Zero Forward/Reverse Recovery Current
High Blocking Voltage
High Frequency Operation
Positive Temperature Coefficient on VF
Temperature Independent Switching Behavior
High surge current capability
VR = 1200 V
IF = 50A (TC=150oC)
Qc = 310nC (VR=800V)
100% avalanche tested
TO-247-2
Benefits
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Higher System Efficiency
Parallel Device Convenience without
thermal runaway
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Higher Temperature Application
No Switching loss
Hard Switching & Higher Reliability
Environmental Protection
Applications
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Motor Drives
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AC/DC converters
DC/DC converters
Uninterruptable power supplies
Solar / Wind Inverters
Maximum Ratings (TC=25°C unless otherwise specified)
Parameter
Peak Repetitive Reverse Voltage
Continuous Forward Current
Symbol
VRRM
IF
Test conditions
Value
1200
155
75
Unit
V
A
TC=25°C
TC=135°C
TC=150°C
50
TC = 25°C, tp=10 ms,
Half Sine Pulse
TC = 110°C, tp=10 ms,
Half Sine Pulse
TC = 25°C, tp=10 ms,
Freq = 0.1Hz, 100 cycles,
Half Sine Pulse
Non repetitive Forward Surge Current
Repetitive peak Forward Surge Current
IFSM
350
A
A
330
320
IFRM
TC = 110°C, tp=10 ms,
Freq = 0.1Hz, 100 cycles,
Half Sine Pulse
300
TC=25°C
TC=110°C
Total power dissipation
PD
625
271
484
80
W
L=2mH, IAS= 22A
VR = 0-1200V
Single Pulse Avalanche Energy
Diode dv/dt ruggedness
Operating Junction Temperature
Storage Temperature
EAS
dv/dt
TJ
mJ
V/ns
-55 to 175 °C
-55 to 175 °C
TSTG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
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Revision:20230214-P1
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