Datasheet > LGE5D06065F

LGE5D06065F

更新时间： 2023-12-06 20:07:50

品牌	Logo	应用领域
鲁光 - LGE		/
页数	文件大小	规格书
5页	875K
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碳化硅肖特基

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LGE5D06065F 数据手册

LGE5D06065F

Silicon Carbide Schottky Diode

Features



Zero Reverse Recovery Current

V_RRM:

IF(TC=142℃)= 6.0A

QC 13.2nC

= 650V

Zero Forward Recovery Voltage

Low power loss,high efficiency

High Frequency Operation

Extremely Fast Switching

Temperature-independent Switching

Positive Temperature Coefficient on V_F

Operating Junction Temperature 175℃

PDFN3*3

Benefits

5,6,7,8

1,2,3,4

 Replace Bipolar with Unipolar Device

 Reduction of Heat Sink Size

 Parallel Devices Without Thermal Runaway

 Essentially No Switching Losses

 High Efficiency

CASE

Applications

 SwitcH Mode Power Supplies(SMPS)

 Power Factor Correction

 Motor Drive,PV Inverter,Wind Power Station

Mechanical Data



Moisture Sensitivity: MSL Level 1,per J-STD-020

Terminals:Matte Tin Finish.

Solderable per MIL-STD-202 Method 208

Case Material：Molded Plastic;



Molding compound meet UL Flammability ClassificationRating 94V-0

Case:JEDEC PDFN3*3



Part Number

Package

PDFN3*3

Marking

LGE5D06065F

http://www.lgesemi.com

Revision:20200701-P1

mail:lge@lgesemi.com

12 3 4 5

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