Datasheet > L9D125G80BG4M10

L9D125G80BG4M10

更新时间： 2024-11-09 05:41:19

品牌	Logo	应用领域
逻辑 - LOGIC		动态存储器双倍数据速率
页数	文件大小	规格书
45页	6016K
描述
2.5 Gb, DDR - SDRAM Integrated Module

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中文翻译

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数据手册

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L9D125G80BG4M10 数据手册

PreLIMINArY INforMAtIoN L9D125G80BG4

2.5 Gb, DDR - SDRAM Integrated Module (IMOD)

Beneﬁts

FEATURES

53% SPACE savings vs. Monolithic,

TSOPII-66 solution

DDR SDRAM Data Rate = 200, 250,

266, and 333 Mbps

DQS edge-aligned with data for

READ; center-aligned with data for

WRITE

Reduced I/O routing (34%)

Package:

DLL to align DQx and DQSLx,

DQSHx transitions with CLKx

Reduced trace length providing

improved/reduced parasitic capaci-

tance

• 25mm x 25mm, Encapsulated

Plastic Ball Grid array (PBGA), 219

balls, 1.27mm pitch.

Four internal banks for concurrent

operation

Impedance matched (60ohm) pack-

2.5V ±0.2V Core Power supply

aging

One data mask per byte, IMOD con-

tains (10) bytes

2.5V ±0.2V I/O Power supply

(SSTL_2 compatible)

High TCE organic laminate inter-

poser

Programmable IOL/IOH Option

Auto PRECHARGE option

Differential Clock inputs (CLKx,

CLKx\)

Suitable for High Reliability applica-

tions

Commands entered on each positive

CLKx edge

Auto REFRESH and SELF

REFRESH Modes

Internal pipelined double-data-

rate (DDR) Architecture; two data

accesses per clock cycle

Available in INDUSTRIAL,

EXTENDED and Mil-Temp ranges

Organized as 16M x 72/80

Programmable Burst Length:

2, 4, or 8

Weight: LOGIC Devices, Inc.

L9D125G80BG4 = 2.75 grams

Bidirectional data strobe (DQSLx,

DQsHx) per byte transmitted/

received with data

typical

i.e. source-synchronous data capture

*Note: This integrated product and/or its speciﬁcations are subject to change without notice.

Latest document should be retrieved from LDI prior to your design consideration.

IMOD SOLUTION

MONOLITHIC SOLUTION

11.9

25mm

22.3

25mm

625mmꢀ

53%

34%

AREA

I/O

5 X 265mmꢀ = 1328mmꢀ PLUS

5 X 66 pins = 320 pins total

219 Balls/Locations

LOGIC Devices Incorporated

www.logicdevices.com

High Performance, Integrated Memory Module Product

Feb 2, 2009 LDS-L9D125G80BG4-C

12 3 4 5 6 7...45

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