Datasheet > KTC3198

KTC3198

更新时间： 2024-11-23 11:32:15

品牌	Logo	应用领域
TGS		晶体晶体管
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描述
TO-92 Plastic-Encapsulate Transistors (NPN)

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KTC3198 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

KTC3198 TRANSISTOR (NPN)

1.EMITTER

2.COLLECTOR

3.BASE

FEATURES

General Purpose Switching Application

Complementary to KTA1266.

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbo

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.15

0.625

200

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

T_j

℃/W

℃

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_{(BR) CEO}

V_(BR)EBO

I_CBO

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 0.1mA ,I_E=0

I_C=5mA,I_B=0

I_E=0.1mA,I_C=0

V_CB=60V,I_E=0

0.1

700

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

h_FE(1)

V_CE=6V, I_C=2mA

V_CE=6V, I_C=150mA

I_C=100mA,I_B=10mA

V_CE=10V,I_C=1mA

VCB=10V, IE=0, f=1MHz

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V_CE(sat)

V_BE(sat)

f_T

0.25

MHz

Collector Output Capacitance

Cob

3.5

CLASSIFICATION OF h_FE(1)

RANK

300-700

RANGE

70-140

120-240

200-400

A,Dec,2010

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