Datasheet > KTC3198-GR

KTC3198-GR

更新时间： 2024-02-17 22:43:36

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页数	文件大小	规格书
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描述
NPN Transistors

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中文翻译

获取价格

技术参数
数据手册

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KTC3198-GR 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.6	Base Number Matches：	1

KTC3198-GR 数据手册

DIP Type

Transistors

NPN Transistors

KTC3198

Unit:mm

3.8 ± 0.3

TO-92

4.8 ± 0.3

■ Features

● Excellent hFE Linearity

● Low Noise

0.60 Max

0.45 ± 0.1

● Complementary to KTA1266

0.5

1.Emitter

2.Collector

3.Base

1.27

2.54

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

150

℃

Collector Power Dissipation

Junction Temperature

625

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 1 mA，I =0

= 100uA， I = 0

CB= 60 V , I = 0

EB= 5V , I =0

E= 0

CBO

EBO

0.1

0.25

Collector-emitter saturation voltage

Base - emitter saturation voltage

CE(sat)

BE(sat)

=100mA, I

=10mA

=100mA, I

^CE= 6V, I

CE= 6V, I

=2mA

700

DC current gain

hFE

C=150mA

Base intrinsic resistance

Noise Figure

rbb'

CB= 10V, I

C= -1mA,f=30MHz

CE= 6V, I = 0.1mA,Rg=10KΩ,f=3MHz

Collector output capacitance

Transition frequency

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= -1mA

3.5

MHz

■ Classification of hfe(1)

Type

KTC3198-O

KTC3198-Y

120-240

KTC3198-GR

200-400

KTC3198-BL

300-700

Range

70-140

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