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KTC3199 PDF预览

KTC3199

更新时间: 2024-11-26 12:54:39
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 137K
描述
TRANSISTOR (NPN)

KTC3199 数据手册

  
RoHS  
KTC3199  
TO-92S  
KTC3199 TRANSISTOR (NPN)  
FEATURES  
1. EMITTER  
Power dissipation  
2. COLLECTOR  
3. BASE  
PCM:  
400  
mW (Tamb=25)  
Collector current  
ICM:  
150  
50  
mA  
V
123  
Collector-base voltage  
V(BR)CBO  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=100µA, IE=0  
Ic=1mA, IB=0  
MIN  
50  
50  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
IE=100µA, IC=0  
µA  
µA  
VCB=50V, IE=0  
0.1  
0.1  
IEBO  
Emitter cut-off current  
VEB=5V, IC=0  
hFE(1)  
DC current gain  
V
CE=6V, IC=2mA  
70  
80  
700  
0.25  
VCE(sat)  
0.1  
V
Collector-emitter saturation voltage  
Transition frequency  
IC=100mA, IB=10mA  
VCE=10V, IC=1mA  
MHz  
pF  
fT  
Cob  
2.0  
1.0  
3.5  
10  
Collector output capacitance  
V
CB=10V, IE=0, f=1MHz  
VCE=6V, Ic=0.1mA,  
NF  
dB  
Noise figure  
f=1KHZ, Rg=10K  
hFE(0.1mA)/hFE(2mA)  
hFE Linearity  
0.95  
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
O
Y
GR  
BL  
Range  
70-140  
120-240  
200-400  
300-700  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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