Datasheet > KTC3199-B

KTC3199-B

更新时间： 2023-05-15 00:00:00

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	325K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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KTC3199-B 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

KTC3199-B 数据手册

KTC3199

KTC3199-O

KTC3199-Y

KTC3199-GR

KTC3199-BL

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

High DC Current Gain: h_FE=70~700

NPN General

Purpose Application

Excellent h_FELinearity: h_FE(0.1mA)/h_FE(2.0mA)=0.95(Typ)

Low Noise: NF=1.0dB(Typ.), 10dB(Max.)

Complementary to KTA1267

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Marking: C3199

TO-92S

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

5.0

150

Unit

I_E

Emitter Current

150

P_C

T_J

T_STG

Collector power dissipation

Junction Temperature

Storage Temperature

400

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

I_CBO

Collector-Base Cutoff Current

---

0.1

uAdc

(V_CB=50Vdc,I =0)

I_EBO

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

(1)

h_FE

V_CE(sat)

f_T

DC Current gain

---

700

0.25

---

Vdc

MHz

(I =2.0mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

0.1

---

(I =100mAdc, I_B=10mAdc)

Transistor Frequency

(V_CE=10Vdc, I =1.0mAdc)

Collector Output Capacitance

C_ob

2.0

3.5

DIMENSIONS

(V_CB=10Vdc, I =0, f=1.0MHz)

Noise Figure

INCHES

DIM

MIN

MAX

MIN

MAX

---

NOTE

(V_CE=6.0Vdc, I =0.1mAdc, f=1.0kHz,

---

1.0

.16

.12

4.00

3.00

Rg=10KOHM)

.59

---

15.00

(1) h_FEClassification O: 70~140, Y: 120~240, GR: 200~400, BL: 300~700

.02

.08

.20

0.45

2.00

5.00

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Revision: 4

2007/03/02

12 3 4

中文翻译

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