Datasheet > KTC3199-Y-AP-HF

KTC3199-Y-AP-HF

更新时间： 2024-02-10 11:30:07

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	618K
描述
Small Signal Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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KTC3199-Y-AP-HF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.82	Base Number Matches：	1

KTC3199-Y-AP-HF 数据手册

KTC3199-O

KTC3199-Y

KTC3199-GR

KTC3199-BL

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

High DC Current Gain: h_FE=70~700

NPN General

Purpose Application

Excellent h_FELinearity: h_FE(0.1mA)/h_FE(2.0mA)=0.95(Typ)

Low Noise: NF=1.0dB(Typ.), 10dB(Max.)

Complementary to KTA1267

Marking: C3199

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

•

Lead Free Finish/RoHS Compliant ("P" Suffix designates

TO-92S

RoHS Compliant. See ordering information)

Halogen free available upon request by adding suffix "-HF"

^·Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Rating

5.0

150

Unit

I_E

Emitter Current

150

P_C

T_J

T_STG

Collector power dissipation

Junction Temperature

Storage Temperature

400

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ Max

Units

OFF CHARACTERISTICS

1. GND

2. OUT

3. IN

I_CBO

Collector-Base Cutoff Current

---

0.1

uAdc

(V_CB=50Vdc,I =0)

I_EBO

Emitter-Base Cutoff Current

(V_EB=5.0Vdc, I =0)

ON CHARACTERISTICS

(1)

h_FE

V_CE(sat)

f_T

DC Current gain

---

700

0.25

---

Vdc

MHz

(I =2.0mAdc, V_CE=6.0Vdc)

Collector-Emitter Saturation Voltage

0.1

---

(I =100mAdc, I_B=10mAdc)

Transistor Frequency

STRAIGHT LEAD BENT LEAD

BULK PACK AMMO PACK

(V_CE=10Vdc, I =1.0mAdc)

Collector Output Capacitance

C_ob

2.0

3.5

DIMENSIONS

(V_CB=10Vdc, I =0, f=1.0MHz)

Noise Figure

INCHES

(V_CE=6.0Vdc, I =0.1mAdc, f=1.0kHz,

Rg=10KOHM)

---

1.0

DIM

MIN

.056

MAX

.064

MIN

1.42

3.90

MAX

1.62

NOTE

.154

.120

.161

.128

4.10

3.25

(1) h_FEClassification O: 70~140, Y: 120~240, GR: 200~400, BL: 300~700

3.05

.050

1.27

Straight Lead

Bent Lead

2.64 Straight Lead

.086

.096

.173

.594

.110

.104

.220

.610

2.20

2.44

4.40

2.80

Bent Lead

5.60

15.50

15.10

* For ammo packing detailed specification, click here to visit our website

of product packaging for details.

www.mccsemi.com

1 of 4

Revision: C

2013/01/01

12 3 4

中文翻译

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与KTC3199-Y-AP-HF相关器件

型号	品牌	获取价格	描述	数据表
KTC3199-Y-B	MCC	获取价格	暂无描述
KTC3199-Y-BP-HF	MCC	获取价格	Small Signal Bipolar Transistor,
KTC3199-Y-TP	MCC	获取价格	暂无描述
KTC3200	WINNERJOIN	获取价格	TRANSISTOR (NPN)
KTC3200	KEC	获取价格	EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AUDIO AMPLIFIER)
KTC3200	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200	FOSHAN	获取价格	TO-92
KTC3200_03	KEC	获取价格	EPITAXIAL PLANAR NPN TRANSISTOR
KTC3200BL	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
KTC3200BL-BP	MCC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

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