Datasheet > KTC3198-O-M0B2G

KTC3198-O-M0B2G

更新时间： 2024-11-24 00:49:55

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描述
TO-92 NPN Bipolar Transistor

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KTC3198-O-M0B2G 数据手册

KTC3198-O/Y/GR/BL

Taiwan Semiconductor

Small Signal Product

TO-92 NPN Bipolar Transistor

FEATURES

- The transistor is subdivided into four groups according to

its DC current gain: O, Y, GR, BL

- Pb free and RoHS compliant

MECHANICAL DATA

- Case: TO-92 small outline plastic package

- High temperature soldering guaranteed: 260°C/10s

- Weight: 195mg (approximately)

1. Emitter

2. Collector

3. Base

APPLICATION

- General purpose switching and AF amplifier application

TO-92

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Collector Power Dissipation

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_C

V_CBO

V_CEO

V_EBO

I_C

0.5

0.15

Thermal Resistance From Junction to Ambient

Junction and Storage Temperature Range

R_θJA

250

℃/W

°C

T_J, T_STG

-55 to + 150

PARAMETER

MIN

MAX

0.1

SYMBOL

I_CBO

UNIT

μA

V_CB= 60V, I_E= 0

Collector Cut-off Current

Emitter Cut-off Current

V_EB= 5V, I_C= 0

I_EBO

0.1

μA

V_CE= 6V, I_C= 2mA

V_CE= 6V, I_C= 150mA

I_C= 100mA, I_B=10mA

V_CE= 10V, I_C=1mA

V_CB= 10V, I_E=0, f=1MHz

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

f_T

700

DC Current Gain

0.25

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

MHz

C_ob

3.5

Collector Output Capacitance

CLASSIFIACTION OF h_FE

200-400

300-700

RANK

RANGE

70-140

120-240

Version: A14

Document Number: DS_S1405004

12 3 4 5

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