Datasheet > KTA1726

KTA1726

更新时间： 2024-11-19 22:47:27

品牌	Logo	应用领域
KEC		晶体放大器晶体管功率放大器局域网高功率电源
页数	文件大小	规格书
3页	81K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

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中文翻译

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数据手册

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KTA1726 数据手册

SEMICONDUCTOR

KTA1726

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH POWER AMPLIFIER APPLICATION.

FEATURES

ᴌComplementary to KTC4512.

ᴌRecommended for 30Wᴕ35W Audio Frequency

Amplifier Output Stage.

DIM MILLIMETERS

10.30 MAX

15.30 MAX

0.80

Φ3.60+0.20

3.00

6.70 MAX

13.60+0.50

MAXIMUM RATING (Ta=25ᴱ)

5.60 MAX

CHARACTERISTIC

Collector-Base Voltage

SYMBOL

RATING

UNIT

1.37 MAX

0.50

1.50 MAX

2.54

4.70 MAX

2.60

V_CBO

V_CEO

V_EBO

I_C

-80

Collector-Emitter Voltage

Emitter-Base Voltage

1.50 MAX

1.50

-6

1. BASE

9.50+0.20

Collector Current

-6

8.00+0.20

2. COLLECTOR (HEAT SINK)

3. EMITTER

2.90 MAX

I_B

Base Current

-3

P_C

ᴱ

Collector Power Dissipation (Tc=25ᴱ)

Junction Temperature

T_j

150

-55ᴕ150

TO-220AB

T_stg

Storage Temperature Range

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

-10

UNIT

V_CB=-80V, I_E=0

Collector Cut-off Current

I_EBO

ỌA

V_EB=-6V, I_C=0

Emitter Cut-off Current

V_(BR)CEO

h_FE(Note)

V_CE(sat)

f_T

I_C=-25mA, I_B=0

Collector-Emitter Breakdown Voltage

DC Current Gain

-80

V_CE=-4V, I_C=-2A

I_C=-2A, I_B=-0.2A

V_CE=-12V, I_C=-0.5A

V_CB=-10V, I_E=0, f=1MHz

160

-0.5

Collector-Emitter Saturation Voltage

Transition Frequency

MHz

150

C_ob

Collector Output Capacitance

Note : h_FEClassification

R:55~110, O:80~160.

1999. 6. 24

Revision No : 0

1/3

12 3

中文翻译

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