Datasheet > KST9018

KST9018

更新时间： 2024-01-09 05:42:10

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	61K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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KST9018 数据手册

SMD Type

TransistIoCrs

NPN Silicon Transistor

KST9018

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

-0.1

0.4

■ Features

● High current gain bandwidth product.

● power dissipation.(PC=200mW)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector Current to Continuous

Collector Power Dissipation

Junction Temperature

℃

200

150

Storage Temperature

Tstg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Testconditons

Min

Typ Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cut to off current

V(BR)CBO IC= 100μA, IE=0

IC= 1mA, IB=0

V(BR)CEO

V(BR)EBO IE=100μA, IC=0

ICBO

IEBO

hFE

VCB=12V, IE=0

VEB= 3V, IC=0

VCE=5V, IC= 1mA

0.05

0.1

μA

Emitter cut to off current

DC current gain

190

0.5

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

VCE(sat) IC=10mA, IB= 1mA

VBE(sat) IC=10mA, IB= 1mA

1.4

VCE=5V, IC= 5mA,f=400MHz

600

MHz

■ Marking

Marking

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中文翻译

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