Datasheet > KST93S62Z

KST93S62Z

更新时间： 2024-09-27 04:02:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	44K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon

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KST93S62Z 数据手册

KST92/93

High Voltage Transistor

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector Base Voltage

Collector-Emitter Voltage

CBO

: KST92

: KST93

-300

-200

CEO

: KST92

: KST93

-300

-200

Emitter-Base Voltage

Collector Current

-5

EBO

-500

350

150

357

Collector Power Dissipation

Storage Temperature

°C

STG

(j-a)

Thermal Resistance junction to Ambient

°C/W

• Refer to KSP92/93 for graphs

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Collector-Base Breakdown Voltage

I = -100µA, I =0

CBO

CEO

EBO

: KST92

: KST93

-300

-200

* Collector-Emitter Breakdown Voltage

I = -1mA, I =0

C B

: KST92

: KST93

-300

-200

Emitter-Base Breakdown Voltage

I = -100µA, I =0

-5

Collector Cut-off Current

: KST92

CBO

= -200V, I =0

-0.25

µA

: KST93

= -160V, I =0

Emitter Cut-off Current

* DC Current Gain

=3V, I =0

-0.1

µA

EBO

= -10V, I = -1mA

= -10V, I = -10mA

= -10V, I = -30mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

I = -20mA, I = -2mA

-0.5

-0.9

I = -20mA, I = -2mA

Output Capacitance

: KST92

= -20V, I =0

: KST93

f=1MHz

Current Gain Bandwidth Product

= -20V, I = -10mA

MHz

f=100MHz

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A1, July 2001

12 3 4

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