Datasheet > KST9018-3_15

KST9018-3_15

更新时间： 2024-09-27 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	578K
描述
NPN Transistors

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中文翻译

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数据手册

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KST9018-3_15 数据手册

SSMMDD TTyyppee

SMD Type

Transistors IC

NPN

Transistors

KST9018

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

Features

■ F

High current gain bandwidth product.

●

+0.02

-0.02

power dissipation.(PC=200mW)

+0.1

-0.1

●

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

℃

Absolute Maximum Ratings Ta = 25

■

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector Current to Continuous

Collector Power Dissipation

Junction Temperature

℃

P^C

200

T^j

150

Storage Temperature

T^stg

-55 to 150

Electrical Characteristics Ta = 25

■

Parameter

Symbol

V^(BR)CBOI^C= 100 uA, IE=0

I^C= 1mA, IB=0

Testconditions

Min

Typ Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

Collector cut to off current

V(BR)CEO

V^(BR)EBOI^E=100 uA, IC=0

I^CBO

I^EBO

h^FE

VCB=12V, IE=0

VEB= 3V, IC=0

VCE=5V, IC= 1mA

0.05

0.1

190

0.5

1.4

Emitter cut to off current

DC current gain

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

V^CE(sat)IC=10mA, IB= 1mA

VBE(sat) IC=10mA, IB= 1mA

f^T

VCE=5V, IC= 5mA,f=400MHz

600

MHz

■ Classification of hfe

Type

Range

Marking

KST9018-L

KST9018-H

105-190

70-105

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