5秒后页面跳转
KSR1109D87Z PDF预览

KSR1109D87Z

更新时间: 2024-11-21 14:43:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
4页 51K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

KSR1109D87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KSR1109D87Z 数据手册

 浏览型号KSR1109D87Z的Datasheet PDF文件第2页浏览型号KSR1109D87Z的Datasheet PDF文件第3页浏览型号KSR1109D87Z的Datasheet PDF文件第4页 
KSR1109  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
3
Built in bias Resistor (R=4.7K)  
Complement to KSR2109  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R09  
R
B
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
40  
V
CEO  
EBO  
5
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =1mA, I =0  
40  
C
B
I
V
=30V, I =0  
0.1  
600  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
C
V
=10V, I =0  
3.70  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
=10V, I =5mA  
250  
4.7  
MHz  
T
CE  
C
R
3.2  
6.2  
KΩ  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

与KSR1109D87Z相关器件

型号 品牌 获取价格 描述 数据表
KSR1109L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1109MTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1109S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1109TF SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
KSR1109TR SAMSUNG

获取价格

暂无描述
KSR1110 FAIRCHILD

获取价格

NPN Epitaxial Silicon Transistor
KSR1110D87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1110MTF FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1110S62Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
KSR1110-T1 SAMSUNG

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,