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KSR1113S62Z PDF预览

KSR1113S62Z

更新时间: 2024-11-09 05:04:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 45K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

KSR1113S62Z 数据手册

 浏览型号KSR1113S62Z的Datasheet PDF文件第2页浏览型号KSR1113S62Z的Datasheet PDF文件第3页 
KSR1113  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
3
Built in bias Resistor (R =2.2K, R =47K)  
1
2
Complement to KSR2113  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R1  
R13  
B
R2  
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
50  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
50  
V
CEO  
EBO  
10  
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
50  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =100µA, I =0  
50  
C
B
I
V
=40V, I =0  
0.1  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =5mA  
68  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =0.5mA  
V
CE  
C
B
f
V
=10V, I =5mA  
250  
3.7  
MHz  
pF  
T
CE  
C
C
V
=10V, I =0  
E
ob  
CB  
f=1.0MHz  
V (off)  
Input Off Voltage  
Input On Voltage  
Input Resistor  
V
V
=5V, I =100µA  
0.5  
V
V
I
CE  
CE  
C
V (on)  
=0.2V, I =5mA  
1.1  
2.9  
I
C
R
1.5  
2.2  
KΩ  
1
R /R  
Resistor Ratio  
0.042  
0.047  
0.052  
1
2
©2001 Fairchild Semiconductor Corporation  
Rev. A3, July 2001  

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