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KSR1112TF PDF预览

KSR1112TF

更新时间: 2024-11-10 12:58:39
品牌 Logo 应用领域
三星 - SAMSUNG 晶体开关小信号双极晶体管光电二极管
页数 文件大小 规格书
1页 37K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

KSR1112TF 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
其他特性:DIGITAL, BUILT-IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:40 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KSR1112TF 数据手册

  

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暂无描述
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