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KSR1112D87Z PDF预览

KSR1112D87Z

更新时间: 2024-11-08 14:51:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
3页 44K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon

KSR1112D87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
Is Samacsys:N其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

KSR1112D87Z 数据手册

 浏览型号KSR1112D87Z的Datasheet PDF文件第2页浏览型号KSR1112D87Z的Datasheet PDF文件第3页 
KSR1112  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=47K)  
Complement to KSR2112  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Equivalent Circuit  
C
Marking  
R12  
R
B
NPN Epitaxial Silicon Transistor  
E
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
40  
V
CEO  
EBO  
5
V
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
C
E
BV  
I =1mA, I =0  
40  
E
B
I
V
=30V, I =0  
0.1  
600  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
C
V
=10V, I =0  
3.7  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
=10V, I =5mA  
250  
47  
MHz  
T
CE  
C
R
32  
62  
KΩ  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, July 2001  

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