生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTOR |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSR1112L99Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | |
KSR1112MTF | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon | |
KSR1112TF | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KSR1112TI | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KSR1112TR | SAMSUNG |
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Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
KSR1113 | SAMSUNG |
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NPN (SWITCHING APPLICATION) | |
KSR1113D87Z | FAIRCHILD |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
KSR1113L99Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
KSR1113MTF | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
KSR1113S62Z | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |