是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-3PF | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 3.5 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 2.5 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 50 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD5701TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
KSD5702 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) | |
KSD5702TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5702YDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (No Damper Diode) | |
KSD5703 | NJSEMI |
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Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) TO-3PF | |
KSD5703ATBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703AYDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703YDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |