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KSD5701TBTU PDF预览

KSD5701TBTU

更新时间: 2024-11-09 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 显示器高压
页数 文件大小 规格书
5页 70K
描述
Power Bipolar Transistor, 3.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN

KSD5701TBTU 技术参数

生命周期:Obsolete零件包装代码:TO-3PF
包装说明:TO-3PF, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.84
外壳连接:ISOLATED最大集电极电流 (IC):3.5 A
集电极-发射极最大电压:800 V配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):2.5JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

KSD5701TBTU 数据手册

 浏览型号KSD5701TBTU的Datasheet PDF文件第2页浏览型号KSD5701TBTU的Datasheet PDF文件第3页浏览型号KSD5701TBTU的Datasheet PDF文件第4页浏览型号KSD5701TBTU的Datasheet PDF文件第5页 
KSD5701  
High Voltage Color Display Horizontal  
Deflection Output  
Equivalent Circuit  
C
(Damper Diode Built In)  
High Collector-Base Voltage : V  
=1500V  
CBO  
High Switching Speed : t = 0.4µs (Max.)  
F
B
For Color TV  
TO-3PF  
1.Base 2.Collector 3.Emitter  
1
50typ.  
E
NPN Triple Diffused Planar Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
1500  
800  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
CBO  
CEO  
EBO  
V
6
V
I
I
3.5  
A
C
10  
A
CP  
P
Collector Dissipation (T =25°C)  
50  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
10  
Units  
I
I
V
V
= 800V, I = 0  
µA  
CBO  
EBO  
CB  
E
= 4V, I = 0  
40  
250  
30  
mA  
EB  
C
h
h
V
V
= 5V, I = 0.5A  
10  
2.5  
FE1  
FE2  
CE  
CE  
C
= 5V, I = 2.5A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Damper Diode Turn On Voltage  
Fall Time  
I
I
= 2.5A, I = 0.8A  
5
V
V
CE  
C
C
B
= 2.5A, I = 0.8A  
1.5  
BE  
B
f
V
= 10V, I = 0.5A  
3
MHz  
V
T
CE  
C
V
I = 3.5A  
2
F
F
t
V
= 200V, I = 3A  
0.4  
µs  
F
CC  
C
I
= 0.8A, I = - 1.6A  
B1  
B2  
R = 66.7Ω  
L
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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