生命周期: | Obsolete | 零件包装代码: | TO-3PF |
包装说明: | TO-3PF, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 3.5 A |
集电极-发射极最大电压: | 800 V | 配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 2.5 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD5702 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) | |
KSD5702TBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5702YDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 6A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output (No Damper Diode) | |
KSD5703 | NJSEMI |
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Trans GP BJT NPN 800V 10A 3-Pin(3+Tab) TO-3PF | |
KSD5703ATBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703AYDTBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703TBTU | FAIRCHILD |
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Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5703YDTBTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
KSD5707 | FAIRCHILD |
获取价格 |
High Voltage Color Display Horizontal Deflection Output |