是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220F | 包装说明: | LEAD FREE, TO-220F, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.26 |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 100 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 25 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSD2012-Y | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
KSD2012YTU | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
KSD2012YYDTU | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
KSD203AC2 | COSMO |
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SOLID STATE RELAY | |
KSD203AC2_11 | COSMO |
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PRODUCT SPECIFICATION | |
KSD203AC3 | COSMO |
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SOLID STATE RELAY | |
KSD203AC3_11 | COSMO |
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PRODUCT SPECIFICATION | |
KSD203DC2 | COSMO |
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Solid State Relay | |
KSD203DC2_11 | COSMO |
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PRODUCT SPECIFICATION | |
KSD2058 | FAIRCHILD |
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Low Frequency Power Amplifier |