5秒后页面跳转
KSD2058 PDF预览

KSD2058

更新时间: 2024-09-23 22:47:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
4页 49K
描述
Low Frequency Power Amplifier

KSD2058 数据手册

 浏览型号KSD2058的Datasheet PDF文件第2页浏览型号KSD2058的Datasheet PDF文件第3页浏览型号KSD2058的Datasheet PDF文件第4页 
KSD2058  
Low Frequency Power Amplifier  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
60  
V
V
CBO  
CEO  
EBO  
60  
7
3
V
I
I
A
C
Base Current  
0.5  
A
B
P
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
C
a
P
Collector Dissipation (T =25°C)  
25  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
10  
Units  
µA  
I
V
V
= 60V, I = 0  
CBO  
CB  
EB  
E
I
= 7V, I = 0  
1
mA  
V
EBO  
C
V
I
= 50mA, I = 0  
60  
8
CEO  
FE  
C
B
h
V
= 5V, I = 0.5A  
CE C  
V
V
(Sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I
= 2A, I = 0.2A  
1.5  
0.4  
V
V
CE  
C
B
V
V
V
V
= 5V, I = 0.5A  
3
BE  
CE  
CE  
CB  
CC  
C
f
= 5V, I = 0.5A  
MHz  
pF  
µs  
T
C
C
= 10V, f = 1MHz  
35  
0.65  
1.3  
ob  
t
Turn ON Time  
= 30V, I = 2A  
C
ON  
I
= - I = 0.2A  
t
t
Storage Time  
B1  
B2  
µs  
STG  
F
R = 15Ω  
L
Fall Time  
0.65  
µs  
h
Classification  
FE  
Classification  
O
Y
G
h
60 ~ 120  
100 ~ 200  
150 ~ 300  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

与KSD2058相关器件

型号 品牌 获取价格 描述 数据表
KSD2058G ISC

获取价格

Transistor
KSD2058G FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
KSD2058-G SAMSUNG

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
KSD2058O ISC

获取价格

Transistor
KSD2058O FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
KSD2058Y FAIRCHILD

获取价格

暂无描述
KSD2058Y ISC

获取价格

暂无描述
KSD2058-Y SAMSUNG

获取价格

Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3
KSD2058YTSTU FAIRCHILD

获取价格

暂无描述
KSD205AC3 COSMO

获取价格

SOLID STATE RELAY