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KSC2755-Y PDF预览

KSC2755-Y

更新时间: 2024-11-25 21:02:23
品牌 Logo 应用领域
三星 - SAMSUNG 放大器光电二极管晶体管
页数 文件大小 规格书
4页 118K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, SOT-23, 3 PIN

KSC2755-Y 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
其他特性:LOW NOISE最大集电极电流 (IC):0.02 A
基于收集器的最大容量:0.5 pF集电极-发射极最大电压:30 V
配置:SINGLE最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):600 MHz
Base Number Matches:1

KSC2755-Y 数据手册

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