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KSC2755YS62Z PDF预览

KSC2755YS62Z

更新时间: 2024-11-21 15:36:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
5页 59K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

KSC2755YS62Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.84
最大集电极电流 (IC):0.02 A基于收集器的最大容量:0.5 pF
集电极-发射极最大电压:30 V配置:SINGLE
最高频带:VERY HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):600 MHzBase Number Matches:1

KSC2755YS62Z 数据手册

 浏览型号KSC2755YS62Z的Datasheet PDF文件第2页浏览型号KSC2755YS62Z的Datasheet PDF文件第3页浏览型号KSC2755YS62Z的Datasheet PDF文件第4页浏览型号KSC2755YS62Z的Datasheet PDF文件第5页 
KSC2755  
RF AMP, FOR VHF &TV TUNER  
Low NF, High G  
Forward AGC Capability to 30 dB  
NF=2.0dB (TYP.), G =23dB (TYP.) at f=200MHz  
PE  
PE  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
5
V
I
20  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
150  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
0.1  
Units  
I
V
V
V
=20V, I =0  
µA  
CBO  
CB  
CE  
CE  
E
h
=10V, I =3mA  
60  
120  
600  
0.3  
23  
240  
FE  
C
f
Current Gain Bandwidth Product  
Reverse Transfer Capacitance  
Power Gain  
=10V, I =3mA  
400  
MHz  
pF  
T
C
C
f=1MHz, V =10V, I =0  
0.5  
RE  
CB  
E
G
V
=10V, I =3mA  
20  
dB  
PE  
CE  
C
f=200MHz  
I
AGC Current  
Noise Figure  
f=200MHz  
-10  
2.0  
-12  
0.3  
mA  
dB  
AGC  
I
at G = -30dB  
R
E
NF  
V
=10V, I =3mA  
CE C  
f=200MHz  
h
Classification  
FE  
Classification  
R
O
Y
h
60 ~ 120  
90 ~ 180  
120 ~ 240  
FE  
Marking  
H1O  
h
grade  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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