是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.72 |
最大集电极电流 (IC): | 0.03 A | 基于收集器的最大容量: | 0.5 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 90 | 最高频带: | VERY HIGH FREQUENCY BAND |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 850 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2756OS62Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756-R | SAMSUNG |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756RD87Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756RMTF | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756RS62Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756TF | SAMSUNG |
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RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, SO | |
KSC2756-Y | SAMSUNG |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756YL99Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756YMTF | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic | |
KSC2756YS62Z | FAIRCHILD |
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RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silic |