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KSC2756OMTF PDF预览

KSC2756OMTF

更新时间: 2024-11-21 21:12:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器光电二极管晶体管
页数 文件大小 规格书
5页 75K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Very High Frequency Band, Silicon, NPN,

KSC2756OMTF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.72
最大集电极电流 (IC):0.03 A基于收集器的最大容量:0.5 pF
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):90最高频带:VERY HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):850 MHz
Base Number Matches:1

KSC2756OMTF 数据手册

 浏览型号KSC2756OMTF的Datasheet PDF文件第2页浏览型号KSC2756OMTF的Datasheet PDF文件第3页浏览型号KSC2756OMTF的Datasheet PDF文件第4页浏览型号KSC2756OMTF的Datasheet PDF文件第5页 
KSC2756  
Mixer for VHF TV Tuner  
High Conversion Gain : G = 23dB (TYP.)  
CE  
3
2
1
SOT-23  
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
30  
CBO  
20  
V
CEO  
EBO  
4
30  
V
I
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
C
T
T
150  
J
-55 ~ +150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
0.1  
Units  
I
V
V
=20V, I =0  
µA  
CBO  
CB  
CE  
E
h
=10V, I =5mA  
60  
500  
15  
120  
240  
0.5  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Reverse Transfer Capacitance  
Conversion Gain  
I =10mA, I =1mA  
V
MHz  
pF  
CE  
C
B
f
V
=10V, I =5mA  
850  
0.35  
23  
T
CE  
CB  
CE  
C
C
V
V
=10V, I =0, f=1MHz  
0.5  
RE  
E
G
=10V, I =3mA  
dB  
CE  
C
f
=200MHz, f =58MHz  
IF  
RF  
NF  
Noise Figure  
V
=10V, I =3mA  
6.5  
dB  
CE  
C
f
=200MHz, f =58MHz  
RF  
IF  
h
Classification  
FE  
Classification  
R
O
Y
h
60 ~ 120  
90 ~ 180  
120 ~ 240  
FE  
Marking  
H2O  
h
grade  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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