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KSC2223D87Z PDF预览

KSC2223D87Z

更新时间: 2024-11-19 08:36:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 49K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

KSC2223D87Z 数据手册

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KSC2223  
High Frequency Amplifier  
Very small size to assure good space factor in Hybrid IC applications  
f =600MHz (TYP.) at I =1mA  
T
C
C
=1pF (TYP.) at V =6V  
OB  
CB  
NF=3dB (TYP.) at f=100MHz  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
30  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
20  
V
CEO  
EBO  
4
V
I
20  
mA  
mW  
°C  
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
150  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
0.1  
Units  
I
V
V
30V, I =0  
µA  
CBO  
CB=  
E
h
=6V, I =1mA  
40  
90  
0.1  
1
180  
0.3  
FE  
CE  
C
V
(sat)  
Collector Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =1mA  
V
pF  
CE  
C
B
C
V
=6V, I =0, f=1MHz  
E
ob  
CB  
CE  
CB  
f
Current Gain Bandwidth Product  
Time Constant  
V
V
=6V, I =1mA  
400  
600  
12  
MHz  
ps  
T
C
C
=6V, I =1mA  
C
c·rbb  
f=31.9MHz  
NF  
Noise Figure  
V
=6V, I =1mA  
3
dB  
CE  
C
f=100MHz, R =50Ω  
S
h
Classification  
FE1  
Classification  
R
O
Y
h
40 ~ 80  
60 ~ 120  
90 ~ 180  
FE  
Marking  
H5O  
h
grade  
FE  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, April 2001  

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