Datasheet > KSC2223OL99Z

KSC2223OL99Z

更新时间： 2024-11-21 06:14:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	49K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN

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KSC2223OL99Z 数据手册

KSC2223

High Frequency Amplifier

•

Very small size to assure good space factor in Hybrid IC applications

f =600MHz (TYP.) at I =1mA

=1pF (TYP.) at V =6V

NF=3dB (TYP.) at f=100MHz

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

°C

Collector Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

0.1

Units

30V, I =0

µA

CBO

CB=

=6V, I =1mA

0.1

180

0.3

(sat)

Collector Emitter Saturation Voltage

Output Capacitance

I =10mA, I =1mA

=6V, I =0, f=1MHz

Current Gain Bandwidth Product

Time Constant

=6V, I =1mA

400

600

MHz

=6V, I =1mA

c·rbb

f=31.9MHz

Noise Figure

=6V, I =1mA

f=100MHz, R =50Ω

Classification

FE1

Classification

40 ~ 80

60 ~ 120

90 ~ 180

Marking

H5O

grade

Rev. A1, April 2001

12 3 4 5

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