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KSC1008GTA PDF预览

KSC1008GTA

更新时间: 2023-09-03 20:27:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
6页 290K
描述
NPN外延硅晶体管

KSC1008GTA 数据手册

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NPN Epitaxial Silicon  
Transistor  
KSC1008  
Features  
LowFrequency Amplifier Medium Speed Switching  
www.onsemi.com  
High CollectorBase Voltage: V  
= 80 V  
CBO  
Collector Current: I = 700 mA  
C
Suffix “C” means Center Collector (1. Emitter 2. Collector 3. Base)  
Non Suffix “C” means Side Collector (1. Emitter 2. Base  
TO923  
CASE 135AN  
3. Collector)  
Complement to KSA708  
These are PbFree Devices  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
(T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current  
Value  
Unit  
V
TO923 LF  
CASE 135AR  
V
CBO  
V
CEO  
V
EBO  
80  
60  
1
2
V
3
8
V
KSC1008:  
1. Emitter 2. Base 3. Collector  
KSC1008C: 1. Emitter 2. Collector 3. Base  
I
C
700  
mA  
_C  
_C  
T
J
Junction Temperature  
Storage Temperature  
150  
T
STG  
55 to 150  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AC1  
008X  
YWW  
THERMAL CHARACTERISTICS  
(T = 25°C unless otherwise noted.) (Note 1)  
A
Symbol  
Parameter  
Power Dissipation  
Value  
800  
6.4  
Unit  
mW  
P
D
A
= Assembly Code  
C1008 = Device Code  
= O/Y/YC/G  
Derate Above 25_C  
mW/_C  
_C/W  
R
Thermal Resistance,  
156  
θ
JA  
X
JunctiontoAmbient  
YWW = Date Code  
1. PCB size: FR4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)  
with minimum land pattern size.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
August, 2021 Rev. 2  
KSC1008/D  
 

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