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KSC1008YBU PDF预览

KSC1008YBU

更新时间: 2024-09-27 11:10:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
6页 290K
描述
NPN外延硅晶体管

KSC1008YBU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:1.13
最大集电极电流 (IC):0.7 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

KSC1008YBU 数据手册

 浏览型号KSC1008YBU的Datasheet PDF文件第2页浏览型号KSC1008YBU的Datasheet PDF文件第3页浏览型号KSC1008YBU的Datasheet PDF文件第4页浏览型号KSC1008YBU的Datasheet PDF文件第5页浏览型号KSC1008YBU的Datasheet PDF文件第6页 
NPN Epitaxial Silicon  
Transistor  
KSC1008  
Features  
LowFrequency Amplifier Medium Speed Switching  
www.onsemi.com  
High CollectorBase Voltage: V  
= 80 V  
CBO  
Collector Current: I = 700 mA  
C
Suffix “C” means Center Collector (1. Emitter 2. Collector 3. Base)  
Non Suffix “C” means Side Collector (1. Emitter 2. Base  
TO923  
CASE 135AN  
3. Collector)  
Complement to KSA708  
These are PbFree Devices  
1
2
3
ABSOLUTE MAXIMUM RATINGS  
(T = 25°C unless otherwise noted.)  
A
Symbol  
Parameter  
CollectorBase Voltage  
CollectorEmitter Voltage  
EmitterBase Voltage  
Collector Current  
Value  
Unit  
V
TO923 LF  
CASE 135AR  
V
CBO  
V
CEO  
V
EBO  
80  
60  
1
2
V
3
8
V
KSC1008:  
1. Emitter 2. Base 3. Collector  
KSC1008C: 1. Emitter 2. Collector 3. Base  
I
C
700  
mA  
_C  
_C  
T
J
Junction Temperature  
Storage Temperature  
150  
T
STG  
55 to 150  
MARKING DIAGRAM  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AC1  
008X  
YWW  
THERMAL CHARACTERISTICS  
(T = 25°C unless otherwise noted.) (Note 1)  
A
Symbol  
Parameter  
Power Dissipation  
Value  
800  
6.4  
Unit  
mW  
P
D
A
= Assembly Code  
C1008 = Device Code  
= O/Y/YC/G  
Derate Above 25_C  
mW/_C  
_C/W  
R
Thermal Resistance,  
156  
θ
JA  
X
JunctiontoAmbient  
YWW = Date Code  
1. PCB size: FR4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)  
with minimum land pattern size.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
August, 2021 Rev. 2  
KSC1008/D  
 

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