5秒后页面跳转
KSA1281RYTA PDF预览

KSA1281RYTA

更新时间: 2024-09-25 21:15:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
3页 163K
描述
Transistor

KSA1281RYTA 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

KSA1281RYTA 数据手册

 浏览型号KSA1281RYTA的Datasheet PDF文件第2页浏览型号KSA1281RYTA的Datasheet PDF文件第3页 
May 2008  
KSA1281  
Audio Power Amplifier  
Collector Power Dissipation : PC=1W  
3 Watt Output Application  
TO-92L  
1. Emitter 2. Collector 3. Base  
1
Absolute Maximum Ratings* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
-50  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
-5  
V
Collector Current (DC)  
Collector Dissipation (TC=25°C)  
Junction Temperature  
Storage Temperature  
-2  
1
A
PC  
W
°C  
°C  
TJ  
150  
TSTG  
-55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Electrical Characteristics*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Conditions  
Min.  
-50  
-50  
-5  
Typ.  
Max. Units  
BVCBO  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
IC= -100, IE=0  
V
V
V
BVCEO  
BVEBO  
ICBO  
IC= -10mA, IB=0  
IE= -1mA, IC=0  
VCB= -50V, IE=0  
VEB= -5V, IC=0  
-100  
-100  
240  
nA  
nA  
IEBO  
Emitter Cut-off Current  
hFE1  
hFE2  
DC Current Gain  
VCE= -2V, IC= -500mA  
VCE= -2V, IC= -1.5A  
70  
40  
VBE (sat)  
VCE (sat)  
Cob  
Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Output Capacitance  
IC= -1A, IB= -0.05A  
-1.2  
-0.5  
V
V
IC= -1A, IB= -0.05A  
VCB= -10V, IE=0, f=1MHz  
VCE= -2V, IC= -500mA  
40  
pF  
fT  
Current Gain Bandwidth Product  
100  
MHz  
* Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%  
h
Classification  
FE  
Classification  
R
O
hFE  
55 ~ 110  
80 ~ 160  
© 2007 Fairchild Semiconductor Corporation  
KSA1281 Rev. 1.0.0  
www.fairchildsemi.com  
1

与KSA1281RYTA相关器件

型号 品牌 获取价格 描述 数据表
KSA1281Y FAIRCHILD

获取价格

Audio Power Amplifier
KSA1281YBU FAIRCHILD

获取价格

Audio Power Amplifier
KSA1281YTA ONSEMI

获取价格

PNP外延硅晶体管
KSA1298 SAMSUNG

获取价格

PNP (LOW FREQUENCY AMPLIFIER)
KSA1298 FAIRCHILD

获取价格

Low Frequency Power Amplifier
KSA1298D87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
KSA1298L99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
KSA1298O FAIRCHILD

获取价格

Low Frequency Power Amplifier
KSA1298OD87Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
KSA1298OL99Z FAIRCHILD

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon