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KRC410E PDF预览

KRC410E

更新时间: 2024-11-19 01:05:27
品牌 Logo 应用领域
KEC 开关光电二极管晶体管
页数 文件大小 规格书
4页 372K
描述
SEMICONDUCTOR

KRC410E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.73其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-F3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

KRC410E 数据手册

 浏览型号KRC410E的Datasheet PDF文件第2页浏览型号KRC410E的Datasheet PDF文件第3页浏览型号KRC410E的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRC410E~KRC414E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
E
B
FEATURES  
· With Built-in Bias Resistors.  
· Simplify Circuit Design.  
D
2
DIM MILLIMETERS  
_
A
B
C
D
E
F
1.60+0.20  
3
1
_
+
0.85 0.10  
· Reduce a Quantity of Parts and Manufacturing Process.  
· High Packing Density.  
_
+
0.70 0.10  
_
0.27+0.10  
_
1.60+0.10  
_
+
0.39 0.10  
_
EQUIVALENT CIRCUIT  
C
+
G
H
J
1.00 0.10  
0.50  
J
_
0.13+0.05  
F
F
R1  
1. COMMON (EMITTER)  
2. IN (BASE)  
B
3. OUT (COLLECTOR)  
E
ESM  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL RATING  
UNIT  
V
CHARACTERISTIC  
Collector Power Dissipation  
Junction Temperature  
SYMBOL RATING  
UNIT  
mW  
VCBO  
VCEO  
VEBO  
IC  
50  
50  
5
PC  
Tj  
100  
150  
V
V
Tstg  
Storage Temperature Range  
-55150  
100  
mA  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
100  
100  
-
UNIT  
nA  
ICBO  
IEBO  
hFE  
VCB=50V, IE=0  
-
-
-
VEB=5V, IC=0  
Emitter Cut-off Current  
DC Current Gain  
-
120  
-
nA  
VCE=5V, IC=1mA  
IC=10mA, IB=0.5mA  
VCE=10V, IC=5mA  
-
VCE(sat)  
fT *  
Collector-Emitter Saturation Voltage  
Transition Frequency  
0.1  
250  
0.3  
-
V
-
MHz  
KRC410E  
3.29  
7
4.7  
10  
6.11  
13  
KRC411E  
KRC412E  
KRC413E  
KRC414E  
R1  
70  
100  
22  
130  
28.6  
61.1  
Input Resistor  
kΩ  
15.4  
32.9  
47  
Marking  
Type Name  
MARK SPEC  
TYPE  
KRC410E  
NK  
KRC411E  
KRC412E  
NN  
KRC413E  
NO  
KRC414E  
NP  
MARK  
NM  
2014. 3. 31  
Revision No : 3  
1/4  

KRC410E 替代型号

型号 品牌 替代类型 描述 数据表
KRC414 KEC

类似代替

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRC412 KEC

类似代替

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
KRC411 KEC

类似代替

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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