Datasheet > KRC414E

KRC414E

更新时间： 2024-11-07 01:05:51

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	372K
描述
SEMICONDUCTOR

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中文翻译

获取价格

数据手册

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KRC414E 数据手册

SEMICONDUCTOR

KRC410E~KRC414E

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

· With Built-in Bias Resistors.

· Simplify Circuit Design.

DIM MILLIMETERS

1.60+0.20

0.85 0.10

· Reduce a Quantity of Parts and Manufacturing Process.

· High Packing Density.

0.70 0.10

0.27+0.10

1.60+0.10

0.39 0.10

EQUIVALENT CIRCUIT

1.00 0.10

0.50

0.13+0.05

1. COMMON (EMITTER)

2. IN (BASE)

3. OUT (COLLECTOR)

ESM

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL RATING

UNIT

CHARACTERISTIC

Collector Power Dissipation

Junction Temperature

SYMBOL RATING

UNIT

℃

V_CBO

V_CEO

V_EBO

I_C

P_C

T_j

100

150

T_stg

Storage Temperature Range

-55∼ 150

℃

100

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

100

UNIT

I_CBO

I_EBO

h_FE

V_CB=50V, I_E=0

V_EB=5V, I_C=0

Emitter Cut-off Current

DC Current Gain

120

V_CE=5V, I_C=1mA

I_C=10mA, I_B=0.5mA

V_CE=10V, I_C=5mA

V_CE(sat)

f_T*

Collector-Emitter Saturation Voltage

Transition Frequency

0.1

250

0.3

MHz

KRC410E

3.29

4.7

6.11

KRC411E

KRC412E

KRC413E

KRC414E

R₁

100

130

28.6

61.1

Input Resistor

kΩ

15.4

32.9

Marking

Type Name

MARK SPEC

TYPE

KRC410E

KRC411E

KRC412E

KRC413E

KRC414E

MARK

2014. 3. 31

Revision No : 3

1/4

12 3 4

中文翻译

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