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KRC419V PDF预览

KRC419V

更新时间: 2024-11-19 01:09:43
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
6页 390K
描述
SEMICONDUCTOR

KRC419V 数据手册

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SEMICONDUCTOR  
KRC416V~KRC422V  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
E
B
FEATURES  
· With Built-in Bias Resistors.  
· Simplify Circuit Design.  
DIM MILLIMETERS  
_
2
1
· Reduce a Quantity of Parts and Manufacturing Process.  
A
B
C
D
E
G
H
J
1.2 +0.05  
_
0.8 +0.05  
3
_
0.5+0.05  
_
0.3+0.05  
_
1.2+0.05  
_
0.8+0.05  
0.40  
EQUIVALENT CIRCUIT  
P
P
_
0.12+0.05  
_
K
P
0.2+0.05  
TYPE NO.  
KRC416V  
KRC417V  
KRC418V  
KRC419V  
KRC420V  
KRC421V  
KRC422V  
R1(k) R2(k)  
OUT  
5
1
10  
2.2  
10  
R1  
2.2  
2.2  
4.7  
10  
IN  
1. EMITTER  
2. BASE  
R2  
3. COLLECTOR  
10  
4.7  
10  
COMMON  
47  
VSM  
100  
100  
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
UNIT  
Output Voltage  
KRC416V~422V  
KRC416V  
KRC417V  
KRC418V  
KRC419V  
KRC420V  
KRC421V  
KRC422V  
50  
10, -5  
12, -10  
12,-5  
V
VI  
Input Voltage  
20, -7  
30, -10  
40, -15  
40, -10  
100  
V
IO  
PD  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
100  
KRC416V~422V  
Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
Marking  
Type Name  
MARK SPEC  
TYPE  
KRC416V KRC417V KRC418V KRC419V KRC420V KRC421V KRC422V  
N2 N4 N5 N6 N7 N8 N9  
MARK  
2008. 11. 20  
Revision No : 2  
1/6  

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