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KO3403

更新时间: 2024-10-30 05:40:59
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管场效应晶体管
页数 文件大小 规格书
2页 56K
描述
P-Channel Enhancement Mode Field Effect Transistor

KO3403 数据手册

 浏览型号KO3403的Datasheet PDF文件第2页 
SMD Type  
Transistors  
P-Channel Enhancement Mode Field Effect Transistor  
KO3403  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
VDS (V) = -30V  
ID =-2.6 A (VGS=-10V)  
1
2
RDS(ON)  
RDS(ON)  
RDS(ON)  
130 m (VGS = -10V)  
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
180 m (VGS = -4.5V)  
260m (VGS = -2.5V)  
1. Gate  
2. Source  
3. Drain  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
-30  
Unit  
V
V
Gate-Source Voltage  
VGS  
12  
-2.6  
Continuous Drain TA=25  
ID  
A
-2.2  
Current *1  
TA=70  
Pulsed Drain Current *2  
Power Dissipation *1 TA=25  
TA=70  
IDM  
PD  
-20  
1.4  
W
1
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.  
Copper, in a still air environment with TA =25  
*2 Repetitive rating, pulse width limited by junction temperature.  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient*1  
Maximum Junction-to-Ambient *1  
Maximum Junction-to-Lead *2  
Symbol  
Typ  
70  
Max  
90  
Unit  
/W  
t
10s  
RèJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
/W  
RèJL  
/W  
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.  
Copper, in a still air environment with TA =25  
*2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient.  
1
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